Inotera Memories, Inc.

Vanguard International Semiconductor Corporation

Tah-Te Shih

Chung-Yuan Lee

Tsung-Cheng Yang

A DRAM capacitor structure is disposed on the interior surface of a vertical hollow cylinder of a support structure overlying a semiconductor substrate. The support structure further includes a horizontal supporting layer that is integrally connected with the vertical hollow cylinder. A fabrication method for forming the DRAM capacitor structure is also provided.

Capacitor structure and fabrication method thereof

A method for making a semiconductor device includes forming a first mask pattern on a device layer, forming a second mask pattern on the first mask pattern, etching the device layer not covered by the first and second mask patterns to thereby form a first trench, trimming the first mask pattern to form an intermediate mask pattern, depositing a material layer to fill the first trench, polishing the material layer to expose a top surface of the intermediate mask pattern, removing the intermediate mask pattern to form an opening, etching the device layer through the opening to thereby form a second trench.

Method for fabricating fine patterns of semiconductor device utilizing self-aligned double patterning

A method for making a mask, in which, an imprinting lithography process is employed to form a pattern in a first region of a mask substrate, and an E-beam writing process is employed to form another pattern in a second region of the mask substrate. Furthermore, these two patterns may be well stitched through an optical alignment process in an E-beam writing chamber.

Method for fabricating a mask

A transmission modulation mask comprising a first pattern formed of opaque or non light transmitting material and a second pattern formed of partially transmitting material. The light passing through the transmission modulation mask forms interference patterns which improve the edge definition and depth of focus of the image formed on a semiconductor wafer. The transmission modulation mask is particularly useful for small contact hole formation requiring a high degree of dimensional control such as the formation of stacked capacitors for DRAM circuits.

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Taipei, Taiwan

Tah-Te Shih