Korea Research Institute of Chemical Technology

Taek-Mo Chung

Ki-Seok An

Chang-Gyoun Kim

Sun-Sook Lee

Chang Gyoun Kim

Young-Kuk Lee

Yunsoo Kim

Sun Sook Lee

Young Ki Lee

Se Jin Jang

Dong Ju Jeon

Beyong Hwan Ryu

Bo Keun Park

Jeong Hwan Han

Dong-Ju Jeon

Bo-Keum Park

Won-Tae Cho

Seung-Ho Yoo

Kiwhan Sung

Ji Hyeun Nam

Sheby Mary George

Hong Suk Jang

Jong-Sun Lim

Taek Seung Yang

Eun Ae Jung

Seog-Jong Jeong

Young Kuk Lee

Daesung Jung

Han Sun Kim

A novel metal precursor having improved thermal stability and volatility is provided. Also provided herein are: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

Metal precursor for making metal oxide

Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Strontium precursor, method for preparing same, and method for forming thin film by using same

The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; Rand Rare independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen.Sn[O-A-NRR]&#x2003;&#x2003;[Formula 1]

Tin amino-alkoxide complexes and process for preparing thereof

Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.

Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition

A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Volatile nickel aminoalkoxide complex and deposition of nickel thin film using same

A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD):wherein, R, R, Rand Rare each independently Calkyl optionally carrying one or more fluorine substituents; and m is an integer in the range of 1 to 3.

Volatile copper aminoalkoxide complex and deposition of copper thin film using same

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Daejeon, South Korea

Taek-Mo Chung