Fairchild Korea Semiconductor Ltd.

Taek-keun Lee

O-seob Jeon

Joon-seo Son

Byoung-ok Lee

Seung-won Lim

Keun-hyuk Lee

Sung-min Park

A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.

Power device package comprising metal tab die attach paddle (DAP) and method of fabricating the package

Provided is a high power semiconductor package including: an insulation substrate having first and second surfaces opposite to each other; an interconnection patterns formed on the first surface of the insulation substrate, the interconnection patterns including a plurality of first dimples; a power control semiconductor chip mounted on the first surface of the insulation substrate, the power control semiconductor chip electrically connected with the interconnection patterns; and an encapsulation member encapsulating the insulation substrate, the interconnection patterns, and the power control semiconductor chip and exposing at least a portion of the second surface of the insulation substrate.

High power semiconductor package

Growing community of inventors

Bucheon-si, South Korea

Taek-keun Lee