Asm IP Holding B.v.

TaeHee Yoo

SeWoong Jung

YongGyu Han

JongWan Choi

WanGyu Lim

SungKyu Kang

JuHyuk Park

YoungHoon Kim

KiChul Um

KyungEun Lee

JeungHoon Han

HieChul Kim

DooHan Kim

DongHyun Ko

A substrate processing method capable of suppressing void formation includes supplying a silicon precursor on a pattern structure to form a silicon source layer having a first opening; and supplying plasma on the silicon source layer to volatilize constituents other than silicon included in the silicon source layer to enlarge the first opening.

Substrate processing method

A substrate processing method of filling a recess without voids or seams includes least partially filling a trench with a first material on a substrate including the trench; and supplying at least one constituent element included in the first material and applying plasma to induce fluidization of the first material.

A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.

Thin film forming method

A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

Thin film deposition method

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Bucheon-si, South Korea

TaeHee Yoo