Ips Corporation

Samsung Electronics Co., Ltd.

Integrated Process Systems Ltd.

Tae Wook Seo

Young Hoon Park

Sahng Kyoo Lee

Ki Hoon Lee

Jin-Ho Jeon

Jong-Seung Yi

Ho Seung Chang

Jeon Sig Lim

Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

Method of depositing thin film and method of manufacturing semiconductor using the same

A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

Method of depositing thin film

Provided is an in-situ thin-film deposition method in which a TiSi/Ti layer or TiSi/Ti/TiN layer can be continuously deposited. The method serves to deposit a thin layer as a resistive contact and barrier on a loaded wafer and is performed in a thin-film deposition apparatus including a transfer chamber having a robot arm therein and a plurality of chambers installed as a cluster type on the transfer chamber. The method includes depositing a TiSilayer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to a first chamber; and transferring the wafer to a second chamber using the transfer chamber and depositing a TiN layer on the TiSilayer.

In-situ thin-film deposition method

Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed&#x2267;the first deposition speed&#x2267;the third deposition speed.

Deposition method of TiN thin film having a multi-layer structure

A method for forming trench isolation regions in a semiconductor device reliably electrically isolates a device and enhances a device density. The method for forming trench isolation regions includes forming a trench on a surface of a semiconductor device with a predetermined depth; forming a nitride liner layer on the surface of the semiconductor including the trench, forming a gas distribution region which is uniformly distributed on the nitride liner layer; and forming an insulation layer by filling the trench after said forming of the gas distribution region. The gas distribution region is preferably formed by introducing an ozone gas. The insulation layer is preferably formed by simultaneously introducing ozone gas and TEOS(Tetra Ethyl Ortho-Silicate) chemical.

Method for forming trench isolation regions

A method of manufacturing a capacitor having a high storage capacitance and a method of fabricating semiconductor devices incorporating the same include measures to ensure that the substrate and/or components of the device are not thermally damaged during the process of forming a sacrificial structure of doped oxide layers used as a form in producing the storage electrode of the capacitor. The oxide layers are formed over the substrate by LPCVD or PECVD, which processes can be carried out at a temperature of only about 400-600&deg; C. Each one of an adjacent pair of the doped oxide layers has a different etching rate from the other as the result of a difference (type or amount) in impurities contained in the oxide layers. At least one hole is formed in the sacrificial structure to create a side wall of the sacrificial structure. The side wall is etched so that repeating tooth-like prominences and depressions are formed at the side wall as the result of the different etching rates of the oxide layers. Subsequently, a conductive layer, constituting the storage electrode of the capacitor, is formed over the side wall so that the prominences and depressions of the side wall are reproduced in the conductive layer. A silicon HSG layer can be formed on an inner wall surface or on all of the exposed surfaces of the storage electrode to further increase the storage capacitance.

Growing community of inventors

Suwon-si, South Korea

Tae Wook Seo