Samsung Sdi Co., Inc.

Tae Won Park

Jong Won Lee

Won Jung Kim

Youn Jin Cho

Eui Rang Lee

Yoon Young Koo

Hyeong Mook Kim

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:

CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.

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Suwon-si, South Korea

Tae Won Park