Skhynix Inc.

Tae Joong Ha

Jin Soo Kim

Chang Moon Lim

Yong Dae Kim

Seo Min Kim

In Hwan Lee

Yoon Suk Hyun

Sun Young Koo

Mi Jeong Lim

Byung Hoon Lee

There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

Phase shift mask for EUV lithography and manufacturing method for the phase shift mask

A photomask includes a light transmission substrate, a plurality of pattern regions disposed over the light transmission substrate, a shape of the plurality of pattern regions being transferred onto a wafer during an exposure process, and a light blocking region surrounding the plurality of pattern regions. Each of the plurality of pattern regions is a light transmitting region that exposes a portion of the light transmission substrate. The light blocking region includes first light blocking patterns that respectively surround the plurality of pattern regions to have closed loop shapes and second light blocking patterns that are disposed between adjacent first light blocking patterns, adjacent second light blocking patterns being spaced apart from each other by a first distance in a first direction. And the first light blocking patterns have a first thickness and the second light blocking patterns have a second thickness which is smaller than the first thickness.

Photomask including transfer patterns for reducing a thermal stress

A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

Photomask blank and photomask for suppressing heat absorption

A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.

A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.

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Daejeon, South Korea

Tae Joong Ha