Wonik Ips Co., Ltd.

Tae Ho Jeon

Sang Jun Park

Seung Han Lee

Jeong Min Lee

Jin Pil Heo

Sang Jin Lee

Chang Hee Han

Byoung Guk Son

Tae Ho Kim

Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

Method for forming thin film

Provided are a substrate processing apparatus and a substrate processing method using the same and, more particularly, a substrate processing apparatus capable of controlling deposition of a reactive-metal-containing precursor in an exhaust line, and a substrate processing method using the same.

Substrate processing apparatus and substrate processing method using the same

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Pyeongtaek-si, South Korea

Tae Ho Jeon