Hitachi Metals, Ltd.

Hitachi Cable, Inc.

Tadayoshi Tsuchiya

Naoki Kaneda

Tomoyoshi Mishima

Tomiya Abe

Kazuhiro Mochizuki

Tomonobu Tsuchiya

Akihisa Terano

Masanobu Ito

Dai Ishikawa

A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlGaN (0&#x2266;x&#x2266;0.05) and AlGaN (0&#x3c;y&#x2266;1 and x&#x3c;y) layers. Only the AlGaN layer in the alternating layer is doped with an acceptor.

Nitride semiconductor wafer for a high-electron-mobility transistor and its use

A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.

Nitride semiconductor element and method of manufacturing the same

There is provided a group III nitride semiconductor crystal, containing a donor-type impurity and having a hydrogen concentration of 2.0E+16 cmor less in a crystal.

Group III nitride semiconductor crystal, group III nitride semiconductor substrate, group III nitride semiconductor freestanding substrate, nitride semiconductor device, and rectifier diode

A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1&#xd7;10cm, or the n-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1&#xd7;10cm.

Gallium nitride rectifying device

The invention provides a coaxial cable including an internal insulating layer formed on an outer periphery of an electric conductor, a conductive layer formed on an outer periphery of the internal insulating layer, and an external insulating layer formed on an outer periphery of the conductive layer. The conductive layer is made of a metal nanoparticle paste sintered body obtained by sintering metal nanoparticles by irradiation of light toward a metal nanoparticles paste.

Growing community of inventors

Ishioka, Japan

Tadayoshi Tsuchiya