Other

Bondtech Co., Ltd.

Tokyo Electron Limited

Tadatomo Suga

Bondtech, Inc.

Lan Technical Service Co., Ltd.

Alpha Design Co., Ltd.

Denso Corporation

Renesas Technology Corp.

Taiyo Yuden Co., Ltd.

Senju Metal Industry Co., Ltd.

Toyo Kohan Co., Ltd.

Isabers Japan Co. Ltd.

Masataka Mizukoshi

Ayumi Industry Co., Ltd.

Akira Yamauchi

Toshihiro Itoh

Kenichi Kataoka

Kiyoshi Takekoshi

Shinji Iino

Yoshiie Matsumoto

Masuaki Okada

Ryuichi Kondou

Toru Kawasaki

Toshiyuki Shiratori

Toshihiro Miyake

Kinji Saijo

Kazuo Yoshida

Shigekazu Komatsu

Hiroaki Okamoto

Rikiya Kato

Keisuke Saito

Sakie Yamagata

Tomoyuki Abe

Eiji Higurashi

Mohammad Matiar Rahman Howlader

Shingji Ohsawa

Yamauchi Akira

Matsumoto Yoshiie

Kondou Ryuichi

Tomoyuki Ayumi Industry Co Ltd Abe

Taehyun F209 Mitaka Int Hall Of Residence Kim

A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.

Substrate bonding method and substrate bonding system

Bonding system for bonding a second article to a first article, comprising an activation treatment device that comprises an object supporter that supports objects comprising the second article, and a particle beam source that activates a bonding surface of the second article by irradiating the objects with a particle beam, the objects being set on one treatment surface without being opposed to each other, followed by performing activation treatment by the particle beam source; and a bond device that brings the second article, of which the bonding surface is activated by the activation treatment device, into contact with the first article, to thereby bond the second article to the first article, wherein the object supporter supports the objects in a posture in which a portion formed of a plurality of kinds of materials comprising the bonding surface of the second article in the objects is exposed to the particle beam source.

Bonding system and bonding method

A method of bonding transparent substrates is provided, comprising: preparing a pair of transparent substrates; forming a thin film of aluminum oxide by a sputtering method, on a bonding surface of the transparent substrates; contacting the aluminum oxide thin films in the air to bond the pair of transparent substrates; and heating the bonded pair of transparent substrates.

Method for joining transparent substrates

Bonding system that bonds each of a plurality of second articles to a first article, wherein each of the plurality of second articles is a chip comprising an uneven portion on a circumference closer to a bonding surface to be bonded to the first article, the bonding system comprises: a device for supplying a second article that supplies the plurality of second articles; a bond device that bonds the plurality of second articles to the first article by bringing the plurality of second articles into contact with the first article; and a device for transporting a second article that transports, to the bond device, at least one of the plurality of second articles supplied from the device for supplying a second article, and the device for transporting a second article comprises a holder for holding a second article that holds the uneven portion of the at least one second article.

A joint structure includes a first member, a second member and a metal joint layer. The first member has including a first surface and is made of material having one of copper, copper alloy, aluminum, or aluminum alloy. The second member includes a second surface that faces the first surface of the first material. The metal joint layer includes a gold joint layer made of material having gold or gold alloy and is disposed between the first surface of the first material and the second surface of the second material. A thickness of the metal joint layer is smaller than flatness of the first surface of the first material and flatness of the second surface of the second material. Fluorine is dispersed inside at least the gold joint layer included in the metal joint layer.

Joint structure, electronic device and method for manufacturing the joint structure

The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a NRIE treatment to perform reactive ion etching using Ngas on the joint surfaces of the substrates and a step of performing a Nradical treatment to irradiate the joint surfaces of the substrates with Nradicals after the step of performing the NRIE treatment.

Substrate joining method, substrate joining system and method for controlling hydrophilic treatment device

A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

Substrate bonding apparatus and substrate bonding method

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly

A substrate bonding apparatus () includes a vacuum chamber (), a surface activation part () for activating respective bonding surfaces of a first substrate () and a second substrate (), and stage moving mechanisms () for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (). In order to activate the bonding surfaces in the vacuum chamber (), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates ().

The present invention ensures a good bonding state between the electrode terminals of electronic components and the electrodes of a substrate, and achieves an increase in productivity and a downsizing of the substrate. The present invention includes: an applying step of applying a metal fine powder paste on each of multiple electrodes that are provided on a substrate; a component placing step of placing multiple electronic components with different heights, on the multiple electrodes, respectively; an organic film placing step of placing an organic film on the multiple electronic components; an organic film compressing step of applying a first pressure to the electronic component side with a pressing member and equalizing the height of the organic film; and a bonding step of applying a second pressure to the electronic component side with a compressing member on heating for a predetermined time and sintering the metal fine powder paste.

Electronic component bonding method

An element pressing apparatus includes: a base casing having first and second bases couplable to or separable from each other to form an arrangement space where a board and a plurality of electronic components having different heights are arranged while the first and second bases are coupled to each other; oil encapsulated in the arrangement space; an oil seal member deformed depending on a pressure of the oil; and a hydraulic pressure change portion that changes the pressure of the oil, wherein the pressure of the oil changes by the hydraulic pressure change portion to press the oil seal member to a plurality of electronic components and press the electrode terminals against the electrodes when the board and a plurality of electronic components are arranged in the arrangement space by positioning and placing each of the electrode terminals on each of the electrodes.

Element pressing apparatus and heating system using element pressing apparatus

A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Joining method and device produced by this method and joining unit

A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Growing community of inventors

Tokyo, Japan

Tadatomo Suga