Semiconductor Energy Laboratory Co., Ltd.

The University of Tokyo

Toto Ltd.

Tadashi Serikawa

Junichiro Sakata

Toshiya Watanabe

Akira Nakajima

Hisashi Ohsaki

Kenji Shinohara

Koji Fukuhisa

In a manufacturing process of a semiconductor device formed using a thin film transistor, an object is to provide a technique by which the number of photomasks can be reduced, manufacturing cost can be reduced, and improvement in productivity and reliability can be achieved. A main point is that a film forming a channel protective layer is formed over an oxide semiconductor layer having a light-transmitting property, a positive photoresist is formed over the film forming a channel protective layer, and a channel protective layer is selectively formed over a channel formation region in the oxide semiconductor layer by using a back surface light exposure method.

Method for manufacturing a semiconductor device using an oxide semiconductor

The present invention provides a method for producing a crystalline metal oxide thin film by first depositing a substantially amorphous metal oxide film, and thereafter, as a post treatment, exposing the film to low temperature plasma in a high frequency electric field at 180&#xb0; C. or less, and the crystalline metal oxide thin film produced by this method. Because the producing method according to the present invention allows a dense and homogenous crystalline metal oxide thin film to be formed onto a substrate at a low temperature without requiring active heat treatment, a metal oxide thin film having desirable characteristics can be formed without damaging the characteristics of a substrate even if the substrate has comparatively low heat resistance.

Thin metal oxide film and process for producing the same

Growing community of inventors

Tokyo, Japan

Tadashi Serikawa