Tokyo Electron Limited

Sumitomo Osaka Cement Co., Ltd.

Tadashi Aoto

Yasuharu Sasaki

Masakazu Higuma

Eiichiro Kikuchi

Nobuyuki Nagayama

Kouji Mitsuhashi

Shigeru Senzaki

Toshiki Sasaki

Takashi Sato

Daisuke Hayashi

Tomoyuki Takahashi

Mamoru Kosakai

Yukio Miura

Kaoru Oohashi

Kimihiro Higuchi

Shinichi Maeta

Kei Furuuchi

Takeshi Sugamata

Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.

Plasma etching apparatus

A mounting table includes an electrostatic chuck, a base, and a cylindrical sleeve. The electrostatic chuck has a top surface to be exposed to plasma and a bottom surface opposite to the top surface, and a first through-hole is formed through the electrostatic chuck. The base is bonded to the bottom surface of the electrostatic chuck by a first adhesive, and a second through-hole is formed through the base. The second through-hole communicates with the first through-hole and has a diameter larger than a diameter of the first through-hole. The sleeve is bonded to the bottom surface of the electrostatic chuck by a second adhesive while communicating with the first through-hole.

Mounting table and plasma processing apparatus

An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.

Electrostatic chuck device

A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.

Substrate mounting stage and surface treatment method therefor

A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.

Surface processing method for mounting stage

A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.

Surface treatment method

A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unitstructuring a ceiling portion of a processing chamberof an etching deviceis structured from a lower assemblyat a processing chamberside including an upper electrodeand an upper assemblyat a power supply side including an electro-bodyA lock mechanismis released, and after the upper assemblyis independently raised and removed by a lift mechanismmaintenance of the upper assemblyand/or the lower assemblyis carried out. The lock mechanismis locked, and after the upper and lower assembliesare integrally raised and removed by the lift mechanismmaintenance of an interior of the processing chamberis carried out.

Processing device and method of maintaining the device, mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism

A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unitstructuring a ceiling portion of a processing chamberof an etching deviceis structured from a lower assemblyat a processing chamberside including an upper electrode, and an upper assemblyat a power supply side including an electro-body. A lock mechanismis released, and after the upper assemblyis independently raised and removed by a lift mechanism, maintenance of the upper assemblyand/or the lower assemblyis carried out. The lock mechanismis locked, and after the upper and lower assembliesare integrally raised and removed by the lift mechanism, maintenance of an interior of the processing chamberis carried out.

Processing device and method of maintaining the device, mechanism and method for assembling processing device part, and lock mechanism and method for locking the lock mechanism

Growing community of inventors

Nirasaki, Japan

Tadashi Aoto