Tohoku University

Tokyo Electron Limited

Canon Kabushiki Kaisha

Other

Sharp Kabushiki Kaisha Corporation

Fuji Photo Film Company, Limited

Rohm Co., Ltd.

Fuji Electric Co., Ltd.

Alps Electric Co., Ltd.

Yazaki Corporation

The Furukawa Electric Co., Ltd.

Mitsubishi Chemical Corporation

Ibiden Company Limited

Ube Industries, Inc.

Zeon Corporation

Tadahiro Ohmi

Nobukazu Ikeda

Masaki Hirayama

Jun-ichi Nishizawa

Michio Yamaji

Akihiro Morimoto

Nobuyoshi Tanaka

Tetsuya Goto

Akinobu Teramoto

Tsutomu Shinohara

Tadashi Shibata

Shigetoshi Sugawa

Keiji Hirao

Yasuyuki Shirai

Takaaki Matsuoka

Hirohisa Kikuyama

Hiroshi Morokoshi

Kouji Nishino

Eiji Ideta

Masafumi Kitano

Mamoru Miyawaki

Ryousuke Dohi

Katsuhisa Ogawa

Takashi Hirose

Yukio Minami

Yoshio Ishihara

Tetsuya Kojima

Masaaki Nagase

Masaru Umeda

Masayuki Toda

Nobuhiro Miki

Kazuhiro Yoshikawa

Yasuhiko Kasama

Kazuhiko Sugiyama

Tatsushi Yamamoto

Toshihisa Nozawa

Masahiro Miki

Kenichi Mitsumori

Kiyotaka Ishibashi

Shigeru Itoi

Takashi Imaoka

Hiroshi Morita

Kaoru Hirata

Katsuyuki Sugita

Koji Sato

Kazuo Tsubouchi

Nobuo Mikoshiba

Akira Nakano

Nobumasa Suzuki

Kazuya Masu

Toshihide Yoshida

Hirokazu Ueda

Tsutomu Yoshida

Tomio Uno

Ryutaro Nishimura

Naofumi Yasumoto

Teruhiko Suzuki

Kenji Yamamoto

Osamu Nakamura

Kazuhide Hasebe

Katsunori Ueno

Eiji Takahashi

Akihiro Nakamura

Hiroshi Suzuki

Atsushi Matsumoto

Junichi Kitagawa

Ryo Enomoto

Jun Hirose

Toshio Nakanishi

Hiroyuki Harada

Alberto Oscar Adan

Seiji Matsumoto

Yoshihiro Sato

Sadao Kobayashi

Yoshio Nakamura

Takashige Tamamushi

Shigenori Ozaki

Minoru Honda

Takehiko Nomura

Masato Kawai

Koji Kotani

Kazuki Moyama

Makoto Murakoshi

Hiroyuki Shimada

Takanori Watanabe

Hiroshi Koizumi

Yasuhiro Kawase

Kazuhide Ino

Hiroo Yabe

Hirofumi Fukui

Yoshihide Wakayama

Hitoshi Inaba

Koji Kawada

Yuichiro Morozumi

Yoshihito Yamada

Shigeru Hayashida

Nobuo Takeda

Atsushi Yamagami

Hiroshi Osawa

Toshiaki Hongoh

Method for increasing the smoothness of the free surface area of a PFA film, provided on a component by sequentially exposing it to a temperature higher than its melting temperature so as to melt at least the free surface area, lowering the temperature to solidify the melted portion, remelting the free surface area by exposing it to a temperature of at least the PFA melting temperature and again lowering the temperature. The PFA film may be provided on AlO, Ni or NiFfilm.

Method for smoothing a perfluoro alkoxy alkane film surface

The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of AlO, HfO, ZrO, LaO, and YOformed on the active layer, and a second insulating film composed of SiOformed on the first insulating film.

Semiconductor transistor

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

Magnetron sputtering apparatus

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 &#x3bc;m to 70 &#x3bc;m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 &#x3bc;m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Shower plate sintered integrally with gas release hole member and method for manufacturing the same

This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.

Semiconductor device

A method of etching capable of rapidly and flatly performing wet etching on a Si substrate using fluonitric acid represented by HF(a)HNO(b)HO(c) (where the unit of a, b and c is wt % and a+b+c=100). The etching rate of an SiOlayer with the highly concentrated fluonitric acid is significantly lowered by the appropriate selection of its composition as compared with the etching rate of the Si substrate, and etch the Si substrate until the SiOlayer is exposed. In this way, it is possible to rapidly etch the Si substrate and significantly enhance the flatness of the etched surface.

[object Object]

A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiOfilm and an AlOfilm is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Method for fabricating semiconductor device and the semiconductor device

Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n-type a-Si layer is in contact with a transparent electrode formed by an n-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.

Photoelectric conversion element and solar cell

A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.

Plasma processing apparatus and plasma processing method

A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness 'tf' of the conductor layer on the base film formed in the flexible region and the average thickness 'tR' of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf&#x3c;tR.

Flex-rigid printed wiring board and manufacturing method thereof

An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block.

Gasket type orifice and pressure type flow rate control apparatus for which the orifice is employed

A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

Plasma processing apparatus

A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatusincludes a vacuum chamberhaving therein a mounting tableconfigured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguidethrough which a high frequency power for exciting plasma is supplied into the vacuum chamber; a waveguide path, connected to the first coaxial waveguide, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate.

Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.

Manufacturing method of GaN-based semiconductor device and semiconductor device

Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.

Wiring board and method of manufacturing the same

Growing community of inventors

Sendai, Japan

Tadahiro Ohmi