Shin-etsu Handotai Co., Ltd.

Other

Tadahiro Kato

Hideo Kudo

Sadayuki Okuni

Hisashi Masumura

Masahiko Yoshida

Keiichi Okabe

Takashi Nihonmatsu

Hisashi Oshima

Masami Nakano

Seiichi Miyazaki

Shunichi Ikeda

Kenji Kobayashi

Sunao Shima

Hiroshi Tomioka

Koji Kitagawa

Hiroshi Oishi

Kiyoshi Demizu

Toshiaki Takaku

Shigeyoshi Netsu

Mamoru Okada

Kenji Ohkura

Masahito Saitoh

Masayoshi Sekizawa

Yukio Itoi

Hisashi Kijima

Yoshinori Sasaki

Akitoshi Enari

Mitsutaka Irago

Tomiichi Sudou

Sadayuki Ohkuni

The present invention is a fixed-abrasive-grain wire including a core wire and abrasive grains fixed on a surface of the core wire, wherein an abrasive grain density is 1200 grains/mmor more, where the abrasive grain density is the number of the abrasive grains per unit area on the surface of the core wire, and 2% or less of all distances between centroids of the abrasive grains are equal to or shorter than an average circle equivalent diameter of the whole abrasive grains. There can be provided a fixed-abrasive-grain wire, a wire saw, and a method for slicing a workpiece that can suppress meandering of the fixed-abrasive-grain wire during slicing a workpiece and improve TTV and warp of wafers sliced from the workpiece.

Fixed-abrasive-grain wire, wire saw, and method for slicing workpiece

A chamfering apparatus including chamfering part for removing notch, cleaning part for cleaning and drying wafer, and chamfered-shape measuring part for measuring chamfered shape, each of chamfering and cleaning part, and chamfered-shape measuring part including rotatable stage for holding wafer and control unit for controlling rotational positions of rotatable stage and wafer, rotatable stage having reference position serving as reference of rotational positions at beginning of rotation, wherein wafer is held wherein rotational position of wafer at beginning of rotation relative to reference position is at same rotational position on all rotatable stages, and control unit to control rotational position of wafer to be at predetermined position at beginning and end of rotation. As a result, the chamfering apparatus and method for manufacturing notchless wafer allowing appropriate feedback control even in notchless wafer, suppress variation in chamfered shape dimension, and achieve desired cross-sectional shape precision of wafer chamfered portion.

Chamfering apparatus and method for manufacturing notchless wafer

[Object] An outer periphery polishing apparatus capable of polishing the edge of workpieces having different bevel angles is to be provided. [Solution] Edge polishing unitsA,B for polishing the front surface edge Ea and the rear surface edge Eb of the workpiece W each include a polishing member mounting structureto which a polishing memberis attached, a mounting structure support unitthat tiltably supports the polishing member mounting structure, a mounting structure angle adjustment mechanismthat adjusts a tilt angle of the polishing member mounting structure, a reciprocation support basethat supports the mounting structure support unitso as to move along a reciprocation line, a base support unitthat tiltably supports the reciprocation support base, a base angle adjustment mechanismthat adjusts the tilt angle of the reciprocation support baseso as to be parallel to the edge Eb of the workpiece W, and a pedestalthat supports the base support unitso as to allow positional correction in a vertical direction and a horizontal direction.

Outer periphery polishing apparatus for disc-shaped workpiece

A method for manufacturing a bonded wafer including bonding together a bond wafer and a base wafer each having a chamfered portion at an outer circumference and thinning the bond wafer, wherein the thinning of the bond wafer includes: a first step of performing surface grinding on the bond wafer such that a thickness of the bond wafer reaches a first predetermined thickness; a second step of removing an outer circumference portion of the ground bond wafer; and a third step of performing surface grinding on the bond wafer such that the thickness of the bond wafer reaches a second predetermined thickness.

Method for manufacturing bonded wafer

A double-disc grinding apparatus having at least: a rotatable ring-shaped holder for supporting a sheet-like wafer having a notch for indicating a crystal orientation from an outer circumference side along a radial direction, the holder having a protruding portion to be engaged with the crystal-orientation-indicating notch; and a pair of grindstones for simultaneously grinding both surfaces of the wafer supported by the holder, in which the holder is provided with at least one protruding portion separately from the protruding portion to be engaged with the crystal-orientation-indicating notch, and the both surfaces of the wafer are simultaneously ground by the pair of the grindstones while the wafer is supported and rotated with the at least one protruding portion being engaged with a wafer-supporting notch formed on the wafer.

Double-disc grinding apparatus and method for producing wafer

The invention is directed to a chamfering apparatus for a silicon wafer to chamfer outer edge of a silicon wafer by using a chamfering grindstone, the chamfering apparatus including at least: a holder holding and rotating a silicon wafer; a chamfering grindstone chamfering the outer edge of the silicon wafer held by the holder; and a control apparatus for controlling a chamfered shape by controlling a relative position of the outer edge of the silicon wafer and the chamfering grindstone by numerical control, wherein the control apparatus controls and changes the relative position of the outer edge of the silicon wafer and the chamfering grindstone at the time of chamfering depending on the circumferential position of the silicon wafer held by the holder, a production method, and an etched silicon wafer. This provides a silicon wafer chamfering apparatus, production method and an etched silicon wafer that can suppress variations in the cross-sectional shape dimensions of a chamfered portion after an etching process.

Chamfering apparatus for silicon wafer, method for producing silicon wafer, and etched silicon wafer

The present invention is a wafer production method at least comprising a chamfering step of chamfering a wafer sliced from an ingot using a grindstone for chamfering, and a step of obtaining a product wafer thinner than the chamfered wafer by performing at least one or more than one of the following processes on the chamfered wafer: flattening, etching, and polishing, the method at least comprising a correction step of chamfering a dummy wafer equivalent in thickness to the product wafer, measuring the chamfered dummy wafer for its chamfered shape, and correcting the shape of the grindstone for chamfering based on the measured chamfered shape of the dummy wafer, at least before the chamfering step, thereby chamfering the wafer sliced from the ingot using the grindstone for chamfering having its shape corrected. Thus, it is possible to provide a wafer production method allowing a product wafer with a desired chamfered shape to be obtained in a short period of time.

Wafer production method

The present invention is a wire saw in which a wire for slicing is wound around a plurality of rollers to form a wire row; the wire for slicing is driven axially in a reciprocating direction; a workpiece is sliced simultaneously at a plurality of points arranged in an axial direction by feeding the workpiece against the wire row with the workpiece cut into while a slurry is supplied to the wire for slicing; the wire saw controlling in such a manner that the workpiece is extracted while the wire is caused to travel at a speed of 2 m/min or less at the time of extracting the workpiece from the wire row after slicing the workpiece. As a result, there is provided a wire saw in which the workpiece sliced with the wire row of the wire saw can be extracted from the wire row with a simple structure without a negative influence on its slicing surface.

Method for slicing workpiece by using wire saw and wire saw

A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 &#x3bc;m, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece.

Workpiece double-disc grinding apparatus and workpiece double-disc grinding method

The present invention provides a method of improving nanotopography of a surface of a wafer sliced from an ingot by using a wire saw apparatus, including improving straightness of feed of a work feed table which is included in the wire saw apparatus and used for feeding the ingot to a wire row formed by winding a wire around a plurality of rollers, and also provides a wire saw apparatus for slicing an ingot to manufacture a wafer, including: a wire row formed by winding a wire around a plurality of rollers; a work feed table for holding and feeding the ingot to the wire row; and a linear-motion guide for linearly guiding the work feed table, wherein a component having a wavelength of 20 to 200 mm in straightness of feed of the work feed table satisfies a PV value &#x2266;1.0 &#x3bc;m. As a result, there are provided the method of eliminating slice waviness having periodicity to improve the nanotopography of the surface of the wafer and the wire saw apparatus.

Method of improving nanotopography of surface of wafer and wire saw apparatus

The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.

Method for producing semiconductor wafer and semiconductor wafer

There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid etching is performed with an acid etchant composed of hydrofluoric acid, nitric acid, phosphoric acid, and water, a method for processing a semiconductor wafer subjected to a chamfering process, a surface grinding process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, and a method for processing a semiconductor wafer subjected to a flattening process, an etching process, and a mirror-polishing process, wherein the etching process is performed as described above, a back surface polishing process is performed after the acid etching as the mirror-polishing process, and then a front surface polishing process is performed. According to this, there can be provided a method for processing a semiconductor wafer to have good flatness, good surface roughness, and good condition on a back surface thereof.

Method for processing semiconductor wafer and semiconductor wafer

In order to improve the productivity or production yield of chips in the process for device fabrication, the present invention provides a wafer or an apparatus of process for fabricating semiconductor devices having the backside of the wafer or the surface of a wafer holding means adjusted so as to have a distribution in contact surface density between the surface of the wafer holding means and the backside of the wafer when the semiconductor wafer is held on the wafer holding means in the process for fabricating devices.

Semiconductor wafer and device for semiconductor device manufacturing process

A double side grinding apparatus comprises a pair of grinding wheels ( ), work rotating device ( ) and moving device ( ). The apparatus operates to bring the grinding faces ( ) into contact with the respective work surfaces (a) to advance each grinding face to the position of a predetermined depth of cut by moving at least one of the grinding wheels ( ) while rotating the grinding wheels ( ) and rotating the work (W) by the device ( ) about an axis thereof as supported in a predetermined grinding position so that an outer periphery of the work (W) intersects outer peripheries of the grinding wheels ( ) with a center (c) of the work (W) positioned inwardly of the grinding faces ( ), stop each of the grinding wheels ( ) from advancing in the direction of depth of cut, move each of the grinding wheels ( ) and the work (W) by the moving device ( ) relative to each other in a direction parallel to the work surface (a) until the center (c) of the work (W) is positioned externally of the grinding faces ( ), and separate the grinding faces ( ) from the work surfaces (a). The surfaces of the work can be ground at the same time easily with diminished variations in the thickness of the work although the apparatus is small-sized.

Method and device for grinding double sides of thin disk work

In a double side simultaneous grinding machine, in which a plate-like workpiece is held and ground simultaneously on both a front surface and a back surface using a pair of grinding stones provided oppositely at both sides of the workpiece, a relative position between at least one of the center of thickness of the plate-like workpiece and the center of the holding means for holding the workpiece, and the center between stone surfaces of the pair of grinding stones is controlled during grinding. In a double side simultaneous grinding method, the generation of warpage of the plate-like workpiece is suppressed and degradation of warpage is prevented. Thereby, the plate-like workpiece can be processed to have high flatness on both sides. Further, the plate-like workpiece can be ground while a degree of warpage is controlled so that the workpiece is processed to have a warpage of a desired degree.

Double-sided simultaneous grinding method, double-sided simultaneous grinding machine, double-sided simultaneous lapping method, and double-sided simultaneous lapping machine

Growing community of inventors

Fukushima, Japan

Tadahiro Kato