United Microelectronics Corp.

Ta-Cheng Lin

Chien-Kuo Wang

Te-Chang Wu

An ESD protection device includes a substrate of a first conductivity type, a well region of a second conductivity type, a first doped region of the second conductivity type, a second doped region of the first conductivity type, a third doped region of the second conductivity type, a fourth doped region of the first conductivity type. The well region is configured in the substrate. The first doped region is configured in the well region. The second doped region is configured in the well region and surrounding the first doped region. The third doped region is configured in the well region and surrounding the first doped region and the second doped region. The fourth doped region is configured in the well region and under the first doped region and the second doped region. The fourth doped region is coupled with the first doped region and with the second doped region, respectively.

ESD protection device having reduced equivalent capacitance

A lateral silicon controlled rectifier structure includes a P-type substrate; an N-well region in the P-type substrate; a first Pdoped region in the N-well region and being connected to an anode; a P-well region in the P-type substrate and bordering upon the N-well region; a first Ndoped region formed in the P-well region and separated from the first Pdoped region by a spacing distance, the first Ndoped region being connected to a cathode; and a gate structure overlying a portion of the P-type substrate between the first Pdoped region and the first Ndoped region.

Growing community of inventors

Hsinchu, Taiwan

Ta-Cheng Lin