Rohm and Haas Electronic Materials Cmp Holdings, Inc.

T Todd Crkvenac

Clyde A Fawcett

Kenneth A Prygon

Gregory P Muldowney

Jeffrey James Hendron

Mary Jo Kulp

Andrew Scott Lawing

Jason M Lawhorn

Bernard Foster

Robert T Gamble

The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 &#x3bc;m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, &#x3c4;, of 1 to 10 &#x3bc;m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, Wthat is less than or equal to the value of &#x3c4;.

Chemical mechanical polishing pad

The present invention provides a chemical mechanical polishing pad comprising a window formed in the polishing pad, the window having a void provided on a side thereof. The polishing pad further comprises a void-pressure relief channel provided in the polishing pad from the void to a periphery of the polishing pad.

Polishing pad having a pressure relief channel

A porous polishing pad is useful for polishing semiconductor substrates. The porous polishing pad has a porous matrix formed from a coagulated polyurethane and a non-fibrous polishing layer. The non-fibrous polishing layer has a polishing surface with a pore count of at least 500 pores per mmthat decreases with removal of the polishing layer; and the polishing surface has a surface roughness Ra between 0.01 and 3 &#x3bc;m.

Porous polyurethane polishing pads

A method of polishing a surface () of an article, e.g., a semiconductor wafer (), using a polishing layer () in the presence of a polishing medium, such as a slurry (). The method includes selecting the rotational rate of the article or the velocity of the polishing layer, or both, so as to control either removal rate uniformity or the occurrence of defects on the polished surface, or both.

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Hockessin, DE, United States of America

T Todd Crkvenac