Mitsubishi Denki Kabushiki Kaisha

Syuichi Osaka

Toshinobu Banjo

Ryuichiro Mori

Hisao Masuda

A semiconductor device having a bonding pad for connecting lead wires comprises a semiconductor substrate, a metal silicide film, a silicon dioxide film, a metal nitride film and an aluminum film. The silicon dioxide film has an opening in a portion corresponding to the bonding pad. The metal silicide film is formed in the portion corresponding to the bonding pad on the semiconductor substrate. The metal nitride film is formed on the metal silicide film and adhered to the metal silicide film. The aluminum film is provided as a bonding pad and formed on the metal nitride film. In a method for manufacturing the above described semiconductor device, the metal silicide film is formed on the semiconductor substrate and patterned. The silicon dioxide film is formed thereon. The opening is formed in the position corresponding to the bonding pad on the silicon dioxide film. The metal nitride film is formed in the opening. The aluminum film is formed on the metal nitride film.

Semiconductor device with bonding pad

A die bonding apparatus includes a stocker for temporarily accommodating dice, a first conveying device for successively picking up a plurality of dice from one wafer and conveying them to the stocker, a wafer loader/unloader for replacing the wafer from which the dice have been picked up with a new one, a bonding station for bonding a die to a work which serves as a die mounting medium, a work loader for supplying works to the bonding station, and a second conveying device for successively conveying the dice accommodated in the stocker to the bonding station.

Growing community of inventors

Hyogo, Japan

Syuichi Osaka