Tokyo Electron Limited

Syuhei Yonezawa

Kazuya Dobashi

Hirokazu Ueda

Hiraku Ishikawa

Koji Kagawa

Masaru Amai

Masahiro Oka

Yoshimasa Watanabe

Toshihide Takashima

There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

Film forming method, boron film, and film forming apparatus

A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.

Method and apparatus for substrate processing

Growing community of inventors

Nirasaki, Japan

Syuhei Yonezawa