Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics Gmbh

Stmicroelectronics (crolles 2) Sas

Commissariat a L'energie Atomique

Stmicroelectronics (rousset) Sas

Alchimer

Sylvain Maitrejean

Emmanuel Augendre

Shay Reboh

Pierre Morin

Nicolas J Loubet

Yves Morand

Romain Wacquez

Frank Fournel

Raluca Tiron

Maxime Argoud

Nicolas Posseme

Laurent Grenouillet

Sébastien Kerdiles

Perrine Batude

Cyrille Le Royer

Thomas Ernst

Aomar Halimaoui

Christophe Morales

Christophe Bureau

Sylvain Barraud

Francois Andrieu

Jean-Charles Barbe

Louis Hutin

Vincent Larrey

Frédéric Mazen

Frederic Mazen

Pablo Acosta Alba

Benoit Mathieu

François Andrieu

Loic Sanchez

Paul-Henri Haumesser

Emilie Bourjot

Valentina Ivanova-Hristova

Séverine Cheramy

Vincent Mazzocchi

Cyril Cayron

Victor Boureau

Gérard Passemard

Paul-Henry Morel

Thierry Mourier

A method is provided for modifying a strain state of a block of a semiconducting material including steps in the following order: a) making a lower region of the block of the semiconducting material resting on a substrate amorphous, while a crystalline structure of an upper region of the block in contact with the lower region is maintained, then b) forming a stressing zone on the block of the semiconducting material, then c) making at least one creep annealing with a suitable duration and temperature to enable creep of the lower region without recrystallizing a material of the lower region, and then d) making at least one recrystallization annealing of the lower region of the block.

Method for modifying the strain state of a block of a semiconducting material

A method for producing a semiconductor substrate is provided, including: producing a superficial layer arranged on a buried dielectric layer and including a strained semiconductor region; producing an etching mask on the superficial layer, covering a part of the region; etching the superficial layer to a pattern of the mask, exposing a first lateral edge of a first strained semiconductor portion belonging to the part and contacting the dielectric layer; forming a mechanical barrier from a second portion of material belonging to the first portion, the second portion having a bottom surface contacting the dielectric layer and an upper surface contacting the mask, the barrier arranged against the part and bearing mechanically against the second portion, and removing the mask.

Method of fabricating a semiconductor substrate having a stressed semiconductor region

A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

Method for transferring chips

A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.

Transistor comprising a channel placed under shear strain and fabrication process

A method for forming a layer by cycled epitaxy includes at least one sequence of steps each having a first epitaxial deposition forming a first growth layer portion having a first thickness on a first monocrystalline pattern and a second growth layer portion having a second thickness on a second non-monocrystalline pattern, the second thickness being greater than the first thickness, and a second epitaxial deposition forming a first sacrificial layer portion having a third thickness on the first growth layer portion and a second sacrificial layer portion having a fourth thickness on the second growth layer portion. The first and second growth layer portions have an additional element content, greater than the additional element content present in the first and second sacrificial layer portions. The sequence also includes etching the whole of the third and fourth thicknesses and stopping before having consumed the whole of the first thickness.

Method for forming a layer by cyclic epitaxy

A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.

Healing method before transfer of a semiconducting layer

A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.

Bonding method with electron-stimulated desorption

The invention relates to a field-effect transistor including an active zone including a source, a channel, a drain and a control gate, which is positioned level with said channel, allowing a current to flow through said channel between the source and drain along an x-axis, said channel including: a first edge of separation with said source; and a second edge of separation with said drain; said channel being compressively or tensilely strained, characterized in that said channel includes a localized perforation or a set of localized perforations along at least said first and/or second edge of said channel so as to also create at least one shear strain in said channel. The invention also relates to a process for fabricating said transistor.

A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the crystalline structure of an upper region of the block, which is in contact with the lower region; b) performing at least one creep annealing of the block with a suitable duration and temperature so that creep occurs in the lower region and without recrystallizing the material of this lower region; and c) performing at least one recrystallization annealing of the lower region of the block.

The method of manufacturing a structure comprising one or several strained semiconducting zones capable of forming one or several transistor channel regions, the method including the following steps:

Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions

Manufacture of a transistor device with at least one P type transistor with channel structure strained in uniaxial compression strain starting from a silicon layer strained in biaxial tension, by amorphization recrystallization then germanium condensation.

Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor

Method of making a transistor with semiconducting nanowires, including:

Method for fabricating a nanowire semiconductor transistor having an auto-aligned gate and spacers

A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.

Method of modifying the strain state of a semiconducting structure with stacked transistor channels

A method for producing a microelectronic device is provided, including forming on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone configured to induce a compressive strain in the first block and a second semi-conductor block covered with a second strain zone configured to induce a tensile strain in the second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of the strain zones; and recrystallizing the lower region of the first and second blocks while using the upper region of crystalline material as starting zone for a recrystallization front.

Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate

A Method for producing a layer of strained semiconductor material, the method comprising steps for: a) formation on a substrate of a stack comprising a first semiconductor layer based on a first semiconductor material coated with a second semiconductor layer based on a second semiconductor material having a different lattice parameter to that of the first semiconductor material, b) producing on the second semiconductor layer a mask having a symmetry, c) rendering amorphous the first semiconductor layer along with zones of the second semiconductor layer without rendering amorphous one or a plurality of regions of the second semiconductor layer protected by the mask and arranged respectively opposite the masking block(s), d) performing recrystallization of the regions rendered amorphous and the first semiconductor layer resulting in this first semiconductor layer being strained (FIG.A).

Method for causing tensile strain in a semiconductor film

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Grenoble, France

Sylvain Maitrejean