Applied Materials, Inc.

Micro Materials Inc.

Swaminathan T Srinivasan

Joseph Michael Ranish

Errol Antonio C Sanchez

Abhijit Basu Mallick

Paul Brillhart

Mehmet Tugrul Samir

Satheesh Kuppurao

Balasubramanian Ramachandran

Jose Antonio Marin

Matthias Bauer

Michael Robert Rice

Aaron Muir Hunter

Tetsuya Ishikawa

Kartik Bhupendra Shah

Nicolas L Breil

Ala Moradian

Peter Reimer

Patrick M Martin

Khokan Chandra Paul

Manjunath Subbanna

Fareen Adeni Khaja

Tuan Anh Nguyen

Srinivas Gandikota

Pramit Manna

Charles T Carlson

Rui Cheng

He Ren

Gaurav Thareja

Jason M Schaller

Susmit Singha Roy

Mukund Srinivasan

Regina Germanie Freed

Sanjay S Natarajan

Uday Mitra

Madhur Sachan

Amrita B Mullick

Steve S Hongkham

Kartik Ramaswamy

Srinivas D Nemani

Jennifer Y Sun

Hou Tee Ng

Juan Carlos Rocha-Alvarez

Wei Liu

David K Carlson

Nag B Patibandla

Sanjeev Baluja

Anantha K Subramani

Christopher Sean Olsen

Amit Kumar Bansal

Thomas B Brezoczky

Jianhua Zhou

Timothy Joseph Franklin

Ajit Balakrishna

Simon Yavelberg

Johanes F Swenberg

Peter I Porshnev

Diwakar N Kedlaya

Shiyu Sun

Matthew James Busche

Jacob Newman

Tejas Ulavi

Atif Noori

Igor V Peidous

Atashi Basu

Kasiraman Krishnan

Jing Tang

Tze Wing Poon

Christopher A Rowland

Kaushik Comandoor Alayavalli

Udayan Ganguly

Sunderraj Thirupapuliyur

Amikam Sade

Marc David Shull

Sohrab Zokaei

Yen B Ta

Vicky U Nguyen

Michael G Ward

Yoshita Yokota

Sunny Chiang

Andrew Darlak

A method for cleaning one or more interior surfaces of a processing chamber includes removing a processed substrate from the processing chamber, and introducing a first cleaning chemistry into the processing chamber to generate a first internal pressure of greater than 1.1 atm within the processing chamber and remove deposited contaminants from the one or more interior surfaces of the processing chamber. The method further comprises removing the cleaning chemistry from the processing chamber.

Conditioning of a processing chamber

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

Exemplary substrate processing systems may include a factory interface and a load lock coupled with the factory interface. The systems may include a transfer chamber coupled with the load lock. The transfer chamber may include a robot configured to retrieve substrates from the load lock. The systems may include a chamber system positioned adjacent and coupled with the transfer chamber. The chamber system may include a transfer region laterally accessible to the robot. The transfer region may include a plurality of substrate supports disposed about the transfer region. Each substrate support of the plurality of substrate supports may be vertically translatable. The transfer region may also include a transfer apparatus rotatable about a central axis and configured to engage substrates and transfer substrates among the plurality of substrate supports. The chamber system may also include a plurality of processing regions vertically offset and axially aligned with an associated substrate support.

High-density substrate processing systems and methods

The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

Chamber architecture for epitaxial deposition and advanced epitaxial film applications

The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

Gas injector for epitaxy and CVD chamber

Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

Silicide films through selective deposition

Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

Conformal high concentration boron doping of semiconductors

An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

Multiple sequential linear powder dispensers for additive manufacturing

Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.

Selective removal process to create high aspect ratio fully self-aligned via

Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

Heater pedestal assembly for wide range temperature control

Growing community of inventors

Pleaseanton, CA, United States of America

Swaminathan T Srinivasan