Carl Zeiss Smt Gmbh

Sven Martin

Ulrich Matejka

Thomas Frank

Oliver Jaeckel

A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

Method for measuring a substrate for semiconductor lithography

The invention relates to a device and a method for characterizing a microlithographic mask. A device according to the invention has an illumination optical unit for illuminating structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus, a detector unit, and an evaluation unit for evaluating the data recorded by the detector unit, wherein the detector unit is configured for the spatially resolved determination of both the intensity and the polarization state of the respectively impinging light emanating from the mask.

Device and method for characterizing a microlithographic mask

A detection device serves for detecting a structure on an area portion of a lithography mask. The detection device has a first spatially resolving detector and also a further spatially resolving detector arranged separately therefrom. The first spatially resolving detector is embodied as a high-intensity (HI) detector and is arranged in an HI beam path of the detection light which emanates from the mask area portion. The further spatially resolving detector is embodied as a low-intensity (LI) detector and is arranged in an LI beam path of the detection light. The HI beam path on the one hand and the LI beam path on the other hand are embodied such that the HI detector is illuminated with a detection light intensity that is at least twice the magnitude of the detection light intensity with which the LI detector is illuminated. The two spatially resolving detectors are embodied for simultaneously detecting the detection light. The result is a detection device whose dynamic range is increased without limitations of a spatial resolution. Alternatively or additionally, the detection device, by way of the two spatially resolving detectors, can also be embodied for the polarization-resolved measurement of the detection light.

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Jena, Germany

Sven Martin