Tokyo Electron Limited

Susumu Takada

Katsushige Harada

Yoshihiro Takezawa

Kazuyoshi Matsuzaki

Ayuta Suzuki

Kosuke Yamamoto

Taiki Kato

Yuji Seshimo

Hisashi Higuchi

A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing HO or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate HO by reaction with the functional group; supplying an HO removal gas containing alcohols or amines into the chamber to remove HO adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an HO removal gas.

Method of manufacturing semiconductor device and method of forming metal oxide film

A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.

Method and apparatus for forming thin film

Growing community of inventors

Nirasaki, Japan

Susumu Takada