Canon Kabushiki Kaisha

Hitachi-High-Technologies Corporation

Other

Susumu Gotoh

Masato Muraki

Yasunari Sohda

Hiroya Ohta

Osamu Kamimura

Masahiko Okunuki

Takao Kariya

Yasuo Kawai

Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Electron beam writing equipment and electron beam writing method

There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection. Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.

Electron beam exposure equipment and electron beam exposure method

Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.

Electron beam exposure apparatus and method, and device manufacturing method

Electron beam exposure apparatus and method

Electron beam exposure method, and device manufacturing method using same

Electron beam exposure apparatus and method, and device manufacturing

An X-ray exposure apparatus wherein a member sensitive to X-ray is exposed to a pattern formed on a mask with the X-rays, includes an X-ray source for emitting X-rays, an irradiation chamber for accommodating the mask and the sensitive member and exposing them to the X-rays emitted by the X-ray source within the chamber and a vacuum pump for evacuating the chamber to effect the exposure operation in a vacuum.

Growing community of inventors

Tokyo, Japan

Susumu Gotoh