Tokyo Electron Limited

Susumu Arima

Yumiko Kawano

Hideaki Yamasaki

Atsushi Matsumoto

Shintaro Aoyama

Koji Maekawa

Takashi Sameshima

Mikio Suzuki

Naoki Shibata

Toshiyuki Hirota

Akinobu Kakimoto

Mitsuhiro Tachibana

Takashi Mochizuki

Takakazu Kiyomura

Kenichi Kubo

Keizo Hosoda

Satoshi Yonezawa

A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Method of forming tungsten film

There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Method of forming a tungsten film having a low resistance

A Ge&#x2014;Sb&#x2014;Te film forming method includes a Sb source material introducing process, a first purging process, a Te source material introducing process, a second purging process, a Ge source material introducing process, a third purging process. An additive gas containing at least one of ammonia, methylamine, dimethylamine, hydrazine, monomethylhydrazine, dimethylhydrazine and pyridine is introduced in at least one of the Sb, Te and Ge source material introducing processes and the first to third purging processes.

Ge&#x2014;Sb&#x2014;Te film forming method, Ge&#x2014;Te film forming method, and Sb&#x2014;Te film forming method

Disclosed is a method for forming a Ge&#x2014;Sb&#x2014;Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge&#x2014;Sb&#x2014;Te film formed of GeSbTeis formed on the substrate by CVD. The method for forming a Ge&#x2014;Sb&#x2014;Te film comprises: a step (step) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of GeSbTein addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in GeSbTe, is formed on the substrate; and a step (step) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

Method for forming Ge-Sb-Te film and storage medium

There is provided a method for forming a Ge&#x2014;Sb&#x2014;Te film having a composition of GeSbTeon a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge&#x2014;Sb&#x2014;Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.

A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of Oat 500&#xb0; C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, Oand HO are used as an oxidizing agent.

Method for Sr&#x2014;Ti&#x2014;O-based film formation

A film-forming method includes a preprocessing step (step) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step) wherein a substrate is loaded into the processing chamber after the step. Then, in a step, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge&#x2014;Sb&#x2014;Te film formed of GeSbTeis formed on the substrate by CVD.

A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.

Transition metal thin film forming method

An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel () for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit () for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (), and an evacuating system () for evacuating the processing vessel (). The evacuating system () includes a vacuum pump (), a high-temperature trapping device () disposed above the vacuum pump () with respect to the flowing direction of a gas, and a low-temperature trapping device () disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device () decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel () to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)produced as a reaction byproduct.

Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system

A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

Film forming unit

A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

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Nirasaki, Japan

Susumu Arima