International Business Machines Corporation

Eastman-Kodak Company

Clarkson University

Other

Ferro Corporation

Rhodia Operations

Infotonics Technology Center, Inc.

Ppg Industries Ohio, Inc.

Teledyne Industries, Inc.

Sematech, Inc.

Climax Engineered Materials, LLC

Suryadevara Vijayakumar Babu

Yie-Shein Her

Ramanathan Srinivasan

William G America

Joseph G Hoffarth

Susan A Visser

Donald Saul Rimai

Paul M Borsenberger

John A Welsh

Neng-hsing Lu

Suresh Ramarajan

Claire Pitois

Carl-Otto Nilsen

Pradeepa Dandu

Cancheepuram V Srividya

Vamsi K Devarapalli

Anita Natarajan

Voya Rista Markovich

Stuart Damon Hellring

Dennis E Smith

Yuzhuo Li

Gerald Walter Jones

Guillaume Criniere

Allan Robert Knoll

Walter E Mlynko

Peter A Agostino

John F Rembetski

Robert T Wiley

Ronald S Horwath

Udaya B Patri

Neng-Hsing Lu

Youngki Hong

Colin P McCann

Vu Q Bui

Robert L Auger

Sreehari Nimmala

Ranganath Teki

Sharath Hedge

Kenneth D Mack

Guillaume Crinière

Satish Narayanan

William F Herrmann

Hariprasad Amanapu

Sharath Hegde

Uma Rames Krishna Laguda

Sunil Chandra

A process for abrasive-free chemical mechanical planarization of silicon thin film coated EUV mask substrates is disclosed. The process removes bumps and pits on the substrate thereby mitigating reflective errors in the mask. The process employs a two-step polishing procedure, in which the second step is abrasive-free and uses an amine or amine salt as the polishing agent.

Abrasive-free planarization for EUV mask substrates

A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.

Abrasive compositions for chemical mechanical polishing and methods for using same

A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.

Method for selective CMP of polysilicon

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Method for one-to-one polishing of silicon nitride and silicon oxide

Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoOdissolved in an oxidizing agent, and particles of MoOdissolved in an oxidizing agent.

Polishing slurries and methods for chemical mechanical polishing

This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

Silica and silica-based slurry

The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.

Chemical-mechanical polishing slurry and method

A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Slurry for chemical mechanical polishing silicon dioxide

This invention relates generally to compositions and methods for removing adherent materials and polishing surfaces. In one embodiment, the method employs an improved media comprising core-shell particles. The media can be applied to microelectronic objects of manufacture.

Polishing compositions comprising polymeric cores having inorganic surface particles and method of use

The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is -lysine and/or -arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.

The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad. The aqueous slurry and method of the present invention provide high silicon dioxide to silicon nitride removal rate selectivity over a wide range of pH, which is particularly useful for the fabrication of shallow trench isolation structures on semiconductor devices.

Growing community of inventors

Potsdam, NY, United States of America

Suryadevara Vijayakumar Babu