Innovative Micro Technology

Other

Uchicago Argonne, LLC

Suresh Sampath

Anirudha V Sumant

Orlando H Auciello

Charles L Goldsmith

Robert W Carpick

Derrick C Mancini

Chris Gudeman

James Hwang

Christopher S Gudeman

John Arthur Carlisle

John A Carlilse

A method for forming electrical contacts on a semiconductor substrate is disclosed. The method includes forming a first metal layer over the substrate, and forming a layer of a second metal oxide by sputter deposition of a second metal in an oxygen environment. In some embodiments, the second metal oxide may be ruthenium dioxide, and the first metal layer may be gold, copper, platinum, silver or aluminum.

Contact material for MEMS devices

A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.

Method for forming a microfabricated structure

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Electrostatic MEMS devices with high reliability

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a 'fast discharge diamond dielectric layer' and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

RF-MEMS capacitive switches with high reliability

Growing community of inventors

Santa Barbara, CA, United States of America

Suresh Sampath