Applied Materials, Inc.

Suraj Rengarajan

Srinivas Gandikota

Robert Jan Visser

Seshadri Ganguli

Prerna Sonthalia Goradia

Geetika Bajaj

Tapashree Roy

Yun-Ching Chang

Debjit Ray

Arina Nikitina

Riya Dutta

Shubhayan Bhattacharya

Kiran Rangaswamy Aatre

A system and method of performing deep cell body segmentation on a biological sample is provided. The method includes receiving a first and a second stained image. The first image is processed using a trained machine learned model that outputs locations of a plurality of cell nuclei in the first stained image. Seed points are then determined based on the locations of the plurality of cell nuclei. The second image is then processed using the seed points to determine a plurality of cell membranes using a watershed segmentation. The second image is then post-processed and an output image is produced. The output image is then analyzed and gene sequencing is performed.

Cell body segmentation using machine learning

According to certain embodiments, a system for detection of anomalous cells, comprises a hyperspectral imaging system; a memory having executable instructions stored thereon; and a processor configured to execute the executable instructions to cause the system to: receive a patient hyperspectral image comprising a pixel spectral signature for each pixel of the received patient hyperspectral image; classify the patient hyperspectral image by a machine learning model trained to classify hyperspectral images based on pixel spectral signatures; and provide an indication that the patient hyperspectral image contains an anomalous cell type, responsive to the classifying.

Artificial intelligence-based hyperspectrally resolved detection of anomalous cells

A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50° C. to 500° C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeating the ALD cycle to form a silicon oxide film. The ALD cycle comprises: exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor; purging the processing chamber of the aminosilane precursor; exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent for a duration in a range of greater than or equal to 100 milliseconds to less than or equal to 3 seconds; and purging the processing chamber of the oxidizing agent.

Deposition of silicon-based dielectric films

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Bengaluru, India

Suraj Rengarajan