Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Sungho Jo

Kyu-Ha Shim

Rajesh Prasad

Steven Robert Sherman

Andrew Michael Waite

Guy Oteri

Somchintana Norasetthekul

Timothy J Miller

Jingmei Liang

Praket Prakash Jha

Sanjay G Kamath

Jun Seok Lee

Jung Chan Lee

Deven Matthew Raj Mittal

Mun Kyu Park

Euhngi Lee

Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

Plasma treatment process to densify oxide layers

As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.

Etch rate modulation through ion implantation

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Chestnut Hill, MA, United States of America

Sungho Jo