Lam Research Corporation

Sung Jin Jung

Yoko Yamaguchi

Qian Fu

Zhongkui Tan

Wonchul Lee

Hua Xiang

Ce Qin

Yasushi Ishikawa

Jayoung Choi

Sangjun Park

Indeog Bae

Lisi Xie

Patrick Ponath

Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Directional deposition in etch chamber

A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.

Hybrid stair-step etch

Growing community of inventors

San Ramon, CA, United States of America

Sung Jin Jung