Hyundai Electronics Industries Co. Ltd.

Lg Semicon Co., Ltd.

Sung-Hun Chi

Jae-Hee Ha

A plug forming method for a semiconductor device includes the steps of forming an insulation layer in a semiconductor substrate, forming an opening on a predetermined surface portion of the semiconductor substrate, forming a polysilicon layer on the insulation layer including the opening, and etching back the polysilicon layer using a compound gas mixed by a first gas including fluorine, and a second gas including one selected from nitrogen and oxygen. The method decreases the etching loading effect and the plug loss, thereby improving the reliability of the semiconductor device.

Plug forming method for semiconductor device

A dry etching method of a multilayer film for a semiconductor device includes a first step for etching a metallic layer or a metallic silicide layer by use of a compound gas plasma mixed by a first gas including at least two of O.sub.2, N.sub.2, CO, a second gas including fluorine, a third gas including chlorine, and a fourth gas including bromine, a second step for processing an entire structure formed on the semiconductor substrate by use of a fluorine gas plasma including carbon, and a third step for etching the polysilicon layer by use of a gas plasma including chlorine. The dry etching method prevents an undercut generation along the sidewalls as etching targets, as well as residues remaining in the substrate, thereby improving a reliability of the semiconductor device. The method omits an additional refining process, thereby decreasing a fabrication time of the semiconductor device, improving productivity and realizing cost reduction of the semiconductor device.

Dry etching method of multilayer film

A dry etching method for a multilayer film is disclosed, which is capable of dry-etching a multilayer film such as a titanium polyside (a polysilicon layer and a titanium silicide layer) and includes the steps of a first step for anisotropically etching the titanium silicide layer using a plasma containing Cl.sub.2 /N.sub.2 gas, and a second step for anisotropically etching the polysilicon layer using a plasma containing Cl.sub.2 /O.sub.2.

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Seoul, South Korea

Sung-Hun Chi