Kabushiki Kaisha Toshiba

Sumito Ootsuki

Hiroyuki Kanaya

Hiroyuki Takenaka

Norihisa Arai

Tomio Katata

Hiroshi Mochizuki

Osamu Hidaka

Kumi Okuwada

The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor substrate.

Semiconductor device and method for the manufacture thereof

The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor. substrate.

Growing community of inventors

Yokohama, Japan

Sumito Ootsuki