J-devices Corporation

Sumikazu Hosoyamada

Shingo Nakamura

Hiroaki Matsubara

Tomoshige Chikai

Takeshi Miyakoshi

Shotaro Sakumoto

Yoshikazu Kumagaya

Shinji Watanabe

Hirokazu Honda

Toshihiro Iwasaki

Kiminori Ishido

Takashi Nakamura

Michiaki Tamakawa

Hiroshi Demachi

Koichiro Niwa

A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.

Semiconductor device

A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.

Semiconductor package

A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.

A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.

Manufacturing method for semiconductor device

A semiconductor package includes a support substrate arranged with a first aperture reaching a semiconductor device on a rear side, the semiconductor device is bonded via an adhesive to a surface of the support substrate, an insulating layer covering the semiconductor device, and wiring for connecting the semiconductor device and an external terminal through the insulating layer. The adhesive may form a part of the first aperture. In addition, a heat dissipation part may be arranged in the first aperture and a metal material may be filled in the first aperture.

Heat sink in the aperture of substrate

Growing community of inventors

Kanagawa, Japan

Sumikazu Hosoyamada