Sumco Corporation

Sumihisa Masuda

Kazuhiro Narahara

Tomohiro Hashii

Kawahito Shinichi

Yasunori Yoshioka

Tsukasa Yoshihara

It would be helpful to provide a wafer separation apparatus and method, and a method for manufacturing a silicon wafer in which poor wafer separation can be easily prevented. A wafer separation apparatusincludes an injection portconfigured to inject a fluid, a rolling element, and a holderconfigured to movably hold the rolling elementin a rollable and integral manner, to be reciprocatable and biased to one side in a reciprocating direction, and to be integrally connected to the injection port

Wafer separation apparatus and method, and method for manufacturing silicon wafer

The present invention provides a method of producing an epitaxial wafer having a highly flat rear surface without polishing top and rear surfaces of the epitaxial wafer after forming an epitaxial film. A method of producing an epitaxial waferaccording to the present invention comprises a step of preparing a semiconductor waferhaving a beveled portionformed on its end portion, a first surface, a second surfaceopposite to the first surface, and edgesandon both of the first surfaceand the second surface, the each edgeandis boundary with the beveled portion; a step of processing of rolling off an outer peripheral portionof the first surfaceto form a roll-off region, the outer peripheral portionis extending outward of the wafer from a predetermined position P inner than the position of the edgeonthe first surface; and a step of forming a first epitaxial filmon the second surface

Method of producing epitaxial wafer and the epitaxial wafer having a highly flat rear surface

Provided is a method of producing an epitaxial silicon wafer which has high flatness at the peripheral portion and an epitaxial silicon wafer obtained by the method. In the method of producing an epitaxial silicon wafer, an epitaxial layer is formed on the top surface of a silicon wafer with a chamfered end having a width of 200 &#x3bc;m or less, which surface has a surface orientation of the (100) plane or the (110) plane.

Method of producing epitaxial silicon wafer and epitaxial silicon wafer

A wafer surface of a semiconductor wafer to be used as a device active region is mirror-polished, and an outer peripheral portion of the mirror-polished wafer surface is further polished, thereby forming an edge roll-off region between the device active region of the wafer surface and a beveled portion formed at the wafer edge. The edge roll-off region has a specific roll-off shape corresponding to an edge roll-off of the oxide film to be formed in a device fabrication process. Thus, a semiconductor wafer can be provided in which reduction in the thickness of an oxide film on the outer peripheral portion of the wafer in a CMP process can be prevented while maintaining high flatness of the wafer surface.

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Tokyo, Japan

Sumihisa Masuda