Tokyo Electron Limited

Sumie Nagaseki

Kyoko Ikeda

Tatsuro Ohshita

Kazuyoshi Matsuzaki

Ikuo Sawada

A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.

Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium

A semiconductor fabrication apparatus includes a semiconductor wafer mounting table having a cavity therein; and a nozzle which jets a liquefied temperature adjustment medium having a temperature equal to or less than a targeted temperature to an inner wall of the cavity in order to adjust a temperature of the semiconductor wafer mounting table to the targeted temperature. The semiconductor fabrication apparatus further includes a pressure detecting unit for detecting an internal pressure of the cavity; and a vacuum pump which discharges gas within the cavity such that a pressure detected by the pressure detecting unit becomes equal to or more than a saturated vapor pressure related to the temperature of the temperature adjustment medium jetted from the nozzle and equal to or less than a saturated vapor pressure related to the targeted temperature.

Semiconductor fabrication apparatus and temperature adjustment method

A method of manufacturing a semiconductor device includes steps of: generating positively or negatively charged fine bubbles having substantially zero buoyancy in a coating solution as an insulating film forming material; coating the coating solution including the bubbles on a substrate to form a coating film; and baking the coating film by heating the substrate before the bubbles are removed to obtain a porous low dielectric constant insulating film.

Method of manufacturing semiconductor device, apparatus for manufacturing same, and storage medium

Provided is a method for performing etching process or film forming process to a substrate W whereupon a prescribed pattern is formed with an opening. The method is provided with a step of mixing a liquid and a gas, at least one of which contains a component that contributes to the etching process or the film forming process, and generating charged nano-bubbleshaving a diameter smaller than that of the opening formed on the semiconductor substrate W; a step of forming an electric field to attract the nano-bubbles onto the surface of the substrate W; and a step of performing the process by supplying the substrate with the liquid containing the nano-bubbleswhile forming the electric field.

Growing community of inventors

Nirasaki, Japan

Sumie Nagaseki