Tokyo Electron Limited

Tokyo Electron Kabushiki Kaisha

Sumitomo Electric Industries, Limited

Tohoku University

Sumi Tanaka

Taro Ikeda

Shigeru Kasai

Masatake Yoneda

Hideki Lee

Tomihiro Yonenaga

Kouki Suzuki

Satoru Kawakami

Mitsuhiro Tachibana

Hiroyuki Miyashita

Kimihiro Matsuse

Tomohiro Suzuki

Hisashi Koike

Hatsuo Osada

Takayuki Kamaishi

Masaki Hirayama

Hirohiko Nakata

Masuhiro Natsuhara

Jun Yamashita

Tadashi Obikane

Masaki Narushima

Kaoru Yamamoto

Mitsutoshi Ashida

Hiromi Kumagai

Masahito Ozawa

Yuichiro Fujikawa

Masato Koizumi

Tamihiro Kobayashi

Sakae Nakatsuka

Yuji Obata

Masao Kubodera

Masamichi Nomura

Tetsuya Saito

Ryoji Yamazaki

Miwa Shimizu

Nobutaka Nakajima

A substrate processing apparatus includes: a processing chamber including a processing room; a heating unit that heats the processing chamber; a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and holds the substrate in the processing room; a stage peripheral member provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening; and a first positioning pin fixed to the processing chamber to position the stage peripheral member, and a second positioning pin fixed to a position farther than the first positioning pin.

Substrate processing apparatus and substrate processing method

A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

Plasma processing apparatus and lower stage

A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.

Stage, plasma processing apparatus, and plasma processing method

There is provided a microwave irradiation apparatus capable of independently controlling a temperature of a target object while irradiating microwave to the target object. The microwave irradiation apparatusincludes a processing chamberconfigured to be vacuum-evacuated; a supporting tableconfigured to support the target object; a processing gas introduction unitconfigured to introduce a processing gas into the processing chamber; a microwave introduction unitconfigured to introduce the microwave into the processing chamber; a heating unitconfigured to heat the target object; a gas cooling unitconfigured to cool the target object by a cooling gas; a radiation thermometerconfigured to measure a temperature of the target object; and a temperature control unitconfigured to adjust the temperature of the target object by controlling the heating unit and the gas cooling unit based on the temperature measured by the radiation thermometer.

Microwave irradiation apparatus

Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

Annealing device

Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamberfor accommodating a wafer W; heating sourcesandincluding LEDsand facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting membersandarranged in alignment with the heating sourcesandto transmit the light emitted from the LEDs; cooling membersandsupporting the light-transmitting membersandat opposite side to the processing chamberto make direct contact with the heating sourcesandand made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling membersandwith a coolant.

Annealing apparatus

A vaporizer () is formed by connecting block-shaped vaporization modules (). Each vaporization module has a discharge opening for a liquid source material; a vaporization chamber () for vaporizing the liquid source material, which is discharged from the discharge opening, to create a source gas; a liquid material flow path () formed so as to penetrate through joint surfaces connected to other vaporization modules; and a spray nozzle communicating with a portion in the middle of the liquid material flow path and leading the liquid source material, which flows in the flow path, to the discharge opening. Each vaporization module is connected at its joint surface to each of the other vaporization modules to cause the liquid material flow paths of all the vaporization modules to communicate with one another. When various flow rates ranging from low to high levels is required, the structure of the evaporator can be easily changed according to such rates without a reduction in evaporation efficiency.

Vaporizer, vaporization module and film forming apparatus

Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.

Substrate processing apparatus and substrate rotating device

A substrate supportingstructure () for semiconductor processing, comprising a mounting table () for placing a processed substrate (W) disposed in a processing chamber (), wherein temperature control spaces () for storing the fluid used as a heat exchange medium are formed in the mounting table (), a conductive transmission path () is disposed to lead a high frequency power to the mounting table (), and flow channels () feeding or discharging the heat exchange medium fluid to or from the temperature control spaces () are formed in the transmission path ().

Substrate supporting structure for semiconductor processing, and plasma processing device

A processing gas is prevented from entering into a space below a placement table. A supporting surfacefor supporting the lower face of a placement tableis provided at an inner circumferential portion of the upper end of a support. A circumferentially extending purge gas grooveis formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support. A narrow flow pathis provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support. A purge gas fed from purge gas-feeding meansinto the purge gas groove diffuses in the circumferential direction in the purge gas grooveand flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas grooveand a space Sbelow the placement table.

Heat treatment apparatus

The object of the present invention is to prevent damage due to thermal stress induced into a substrate holding table in a substrate holding structure for holding a substrate to be processed. In the substrate holding structure having the substrate holding table arranged at the top of a support column, a flanged part is defined by an inner circumferential surface and an outer circumferential surface at a joint between the support column and the substrate holding table. The inner circumferential surface is formed of an inclined surface, which is inclined such that the inner diameter of the flanged part successively increases as approaching the lower surface of the substrate holding table. On the lower surface of the substrate holding table to which the flanged part is joined, a U-shaped groove is formed so as to correspond to the outer circumferential surface of the flanged part.

Substrate holding structure and substrate processing device

A plasma processing apparatusused to execute a specific type of processing such as plasma processing on a workpiece by supplying a processing gas into a chamberwhile applying high-frequency power to generate plasma includes a stageon which the workpiece is placed and a stage supporting unitthat holds the stage. Bellowsandare disposed above and below the stage supporting unitto support the stagein a horizontal state relative to the chamber. Thus, a plasma processing apparatus that does not allow the workpiece stage to become tilted, affords ease of maintenance and is capable of stable processing is provided. In addition, the internal spaces at the bellowsandare used as an exhausting pipe to achieve efficient and uniform exhaustion of the chamber

Microwave plasma processing apparatus for semiconductor element production

A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.

A film deposition apparatus of the present invention includes a container forming a processing chamber for processing a target object, a mounting table which is provided in the processing chamber and on which the target object is mounted, a first heating apparatus provided in the mounting table, for heating the target object mounted on the mounting table, a first gas supply section provided in the container, for supplying processing gas into the processing chamber, the processing gas forming a high-melting-point metal-film layer on the target object mounted on the mounting table, a movable clamp for clamping a periphery of the target object and holding the target object on the mounting table, a second heating apparatus formed separately from the clamp, for heating the clamp indirectly, a gas flow path formed between the clamp and the second heating apparatus when the clamp is moved to a position where the clamp clamps the target object, and a second gas supply section for causing backside gas to flow into the gas flow path.

Film forming device

A susceptor according to the present invention is set in a process chamber for subjecting an object to a specific process and can bear the object thereon. The susceptor includes a stepped section for defining a recessed bearing region capable of bearing the object therein and positioning the object on the susceptor, and at least one groove formed in the bearing region and used to allow a gas remaining in a gap between the object and that part of the susceptor which includes the stepped section to get out of the bearing region.

Growing community of inventors

Nirasaki, Japan

Sumi Tanaka