Samsung Electronics Co., Ltd.

Suk-Jong Bae

Myoung-soo Lee

Jung-Hoon Lee

Byung-Gook Kim

Jong-Su Kim

Myoung-Soo Lee

Yong-Seok Jung

Seong-Woo Choi

Sung-Hoon Park

A method of designing a layout of a photomask and a method of manufacturing a photomask, the method of designing a layout of a photomask including obtaining a design layout of a mask pattern; performing an optical proximity correction on the design layout to obtain design data; obtaining data of a position error of a pattern occurring during an exposure of the photomask according to the design data; correcting position data of the pattern based on the position error data to correct the design data; and providing the corrected position data to an exposure device to expose an exposure beam according to the corrected design data.

Method of designing layout of photomask and method of manufacturing photomask

Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

Photomask registration errors of which have been corrected and method of correcting registration errors of photomask

Provided are an off-axis illumination apparatus, an exposure apparatus, and an off-axis illumination method. The off-axis illumination apparatus may include a mask, a light source for emitting light to the mask, and an incident angle varying section for varying an incident angle of the light. The exposure apparatus may include the off-axis illumination apparatus in addition to a wafer stage and an optical detector. The off-axis illumination method may include irradiating light from the light source to a mask, and moving positions of the light source and the mask to vary an incident angle of the light to the mask.

Off-axis illumination apparatus, exposure apparatus and off-axis illumination method

Provided are equipment and a method for measuring a transmittance of a photomask. The system includes an acoustic optical deflector (AOD) substrate interposed between a light source and the photomask. The AOD is adapted to deflect a laser beam to an oblique incidence angle with respect to a surface of the photomask. A radio frequency (RF) signal source is coupled with the AOD substrate. Varying the frequency of the signal applied to the AOD substrate acts to change the refractive degree of the substrate, thereby changing an angle of deflection of the incident laser beam. A photodetector is positioned to receive the laser beam passing through the photomask and is adapted to measure an intensity of the laser beam which has penetrated the photomask. As a result, a transmittance of the photomask can be measured under off axis illumination (OAI).

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Seoul, South Korea

Suk-Jong Bae