Sk Siltron Co., Ltd.

Suk Jin Jung

Kee Yun Han

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

Polishing measurement device and abrasion time controlling method thereof, and polishing control system including same

The present invention relates to a wafer carrier thickness measuring device capable of accurately measuring an inner/outer circumferential thickness of a wafer carrier in a non-contact manner. The present invention provides a wafer carrier thickness measuring device including: a first table installed to be capable of rotating and moving vertically and capable of supporting a central portion of a wafer carrier; a second table disposed outside the first table and rotatably installed, and capable of supporting an outer circumferential portion of the wafer carrier; upper and lower sensors for calculating a thickness of the wafer carrier by measuring a distance to upper and lower surfaces of the wafer carrier supported by one of the first and second tables in a non-contact manner; and a sensor driving unit located at one side of the second table and moving the upper and lower sensors to an upper side or a lower side of the wafer carrier supported by one of the first and second tables.

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Gumi-si, South Korea

Suk Jin Jung