Sumitomo Heavy Industries Ion Technology Co., Ltd.

Sumitomo Eaton Nova Corporation

Sen Corporation, an Shi and Axcelis Company

Suguru Hirokawa

Keiji Okada

Fumiaki Sato

Masamitsu Shinozuka

Mitsukuni Tsukihara

Michiro Sugitani

Junichi Murakami

Yoshitomo Hidaka

Tetsuya Kudo

Yoshito Fujii

Shinji Ebisu

A wafer holding device includes a wafer chuck that includes a wafer holding surface coming into contact with a wafer to be held and a plurality of attraction regions provided on the wafer holding surface, and a controller configured to independently control an attraction force of an at least one of the plurality of attraction regions. In a case where fixing of the wafer is released, the controller establishes a temporarily fixing state in which the attraction force of the at least one of the plurality of attraction regions is smaller than an attraction force in fixing the wafer, and thereafter, the controller sets attraction forces of all of the plurality of attraction regions to be smaller than the attraction force in fixing the wafer.

Wafer holding device and wafer chucking and dechucking method

Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

Ion implantation apparatus and control method for ion implantation apparatus

Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

Method of controlling mover device

A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.

Mover device and semiconductor manufacturing apparatus and method

Growing community of inventors

Ehime, Japan

Suguru Hirokawa