Applied Materials, Inc.

Sudha S R Rathi

Hichem M'Saad

Martin Jay Seamons

Yuxiang May Wang

Michael C Kwan

Wendy H Yeh

Deenesh Padhi

Bok Hoen Kim

Visweswaren Sivaramakrishnan

Sum-Yee Betty Tang

Andy (Hsin Chiao) Luan

Priya Kulkarni

Heraldo L Botelho

Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

Method of depositing an amorphous carbon film for etch hardmask application

Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Liquid precursors for the CVD deposition of amorphous carbon films

A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon

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San Jose, CA, United States of America

Sudha S R Rathi