Applied Materials, Inc.

Subbalakshmi Sreekala

Bok Hoen Kim

Pravin K Narwankar

Arvind Sundarrajan

Xinhai Han

Praket Prakash Jha

Nagarajan Rajagopalan

Murali K Narasimhan

Michael Wenyoung Tsiang

Joe Griffith Cruz

Victor Pushparaj

Tsutomu Kiyohara

Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.

Gate stack materials for semiconductor applications for lithographic overlay improvement

An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

BEOL interconnect with carbon nanotubes

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Milpitas, CA, United States of America

Subbalakshmi Sreekala