Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Su-Min Park

Ji-Hyun Park

Heung-Kyu Kwon

Sung-Woo Park

Min-Ok Na

Soo-Young Kim

Jae-Hyun Kim

Jong-Hwa Lee

Hwan-Sung Cheon

Young-ho Kim

Jeong-Woo Lee

Ji-Young Jeong

Hyun-Yong Cho

Jongkook Kim

Yong-Sik Yoo

Min-Kook Chung

Hohyeuk Im

So-Ra Han

Byoung Wook Jang

Hyun-woo Kim

Hyunki Kim

Junwoo Park

Sunchul Kim

Kyoung-seon Kim

Hyo-Jin Yun

Pyoungwan Kim

Hai-sub Na

Su-Min Kim

Jung-Do Lee

Chanhee Jeong

Inku Kang

Jaesik Lee

Heeyeol Kim

Chang-Ho Lee

Hyunwoo Kim

Su Jin Kim

Seok Won Lee

SeokWon Lee

Hyojin Yun

Yoonha Jung

Soojeoung Park

Bona Baek

Min Ju Park

Kyoungseon Kim

Byoungwook Jang

Haisub Na

JongKook Kim

Min-Ju Park

A semiconductor package includes a semiconductor chip disposed on a first substrate, a mold layer covering a sidewall of the semiconductor chip and including a through-hole, a second substrate disposed on the semiconductor chip, a connection terminal disposed between the first substrate and the second substrate and provided in the through-hole, and an underfill resin layer extending from between the semiconductor chip and the second substrate into the through-hole.

Semiconductor package

An apparatus includes a first substrate having a first land and a second substrate having a second land. A first molding compound is disposed between the first substrate and the second substrate. A first semiconductor chip is disposed on the first substrate and in contact with the first molding portion. A first connector contacts the first land and a second connector contacts the second land. The second connector is disposed on the first connector. A volume of the second connector is greater than a volume of the first connector. A surface of the first semiconductor chip is exposed. The first molding compound is in contact with the second connector, and at least a portion of the second connector is surrounded by the first molding compound.

Stacked semiconductor packages

A method for fabricating a semiconductor package including mounting a first semiconductor chip on a first substrate, disposing a first connector on the first substrate, placing a molding control film on the first semiconductor chip to horizontally extend over the first substrate, filling a space between the molding control film and the first substrate with a molding compound such that the molding compound contacts side surfaces of the first semiconductor chip and covers the first connector and does not cover a top surface of the first semiconductor chip, detaching the molding control film, forming an opening through the molding compound to expose a portion of the first connector, disposing a second connector and a second semiconductor chip on opposite surfaces of a second substrate, respectively, and placing the second substrate on the first substrate such that the second connector contacts the first connector may be provided.

Method of fabricating a semiconductor package

Apparatus for stacked semiconductor packages and methods of fabricating the same

In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Method of forming micropatterns

Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Method of forming fine patterns in an anti-reflection layer for use as a patterning hard mask

Packages substrates are provided. The package substrates may include a substrate and a set of leads disposed on the substrate. The set of lead may include a first lead, a second lead and a third lead, which are sequentially disposed along a first direction. Each of the first lead, the second lead and the third lead may extend along a second direction that is different from the first direction. The first lead and the second lead may be spaced apart at a first distance, and the second lead and the third lead may be spaced apart at a second distance that is less than the first distance.

Package substrates and integrated circuit packages including the same

Provided are a semiconductor package and a method of fabricating the same. The package substrate includes a hole, which may be used to form a mold layer without any void. The mold layer may be partially removed to expose a lower conductive pattern. Accordingly, it is possible to improve routability of solder balls.

Semiconductor package and method of fabricating the same

In a composition of forming a passivation layer, the composition includes about 30 to about 60 percent by weight of a mixed polymer resin formed by blending polyamic acid and polyhydroxy amide, about 3 to about 10 percent by weight of a photoactive compound, about 2 to about 10 percent by weight of a cross-linking agent and an organic solvent. The passivation layer formed by using the composition has superior mechanical and physical properties, in which disadvantages of polyimide and polybenzoxazole are compensated by mixing both materials.

Methods of forming a passivation layer

Disclosed are a novel phenol compound comprising a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof, and a positive photosensitive resin composition including the same.

Phenol compounds and positive photosensitive resin composition including the same

Provided is a semiconductor chip. The semiconductor chip includes a semiconductor substrate including a main chip region and a scribe lane region surrounding the main chip region. An insulating layer is disposed over the semiconductor substrate. A guard ring is disposed in the insulating layer in the scribe lane region. The guard ring surrounds at least a portion of the main chip region. The guard ring has a brittleness greater than a brittleness of the insulating layer.

Semiconductor chips having guard rings and methods of fabricating the same

An ortho-nitrobenzyl ester compound including a compound represented by Chemical Formula 1, and a positive photosensitive resin composition including the same are provided.

Ortho-nitrobenzyl ester compound and positive type photosensitive resin composition including the same

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Ansan-si, South Korea

Su-Min Park