United Microelectronics Corp.

Su Lu

Ching-Hsiang Hsu

Ta-chi Kuo

Nai Jen Yeh

A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode formed over the substrate, and self-aligned source and drain regions implanted into the device with external electrodes connected thereto.

Low resistance, high breakdown voltage, power mosfet

A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the oppositely substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode of matching configurations formed over the substrate, and self-aligned source drain regions implanted into the device with external electrodes connected thereto.

Growing community of inventors

Tahsi Taoyuan, Taiwan

Su Lu