Applied Materials, Inc.

Su Ho Cho

Shuran Sheng

Shinobu Abe

Soo Young Choi

Kyung-Tae Kim

Fei Peng

William Allan Bagley

Young-Jin Choi

Samuel Leung

Keita Kuwahara

Tsunehiko Kitamura

Beomsoo Park

Chang Hee Shin

An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

Reactor design for large-area VHF plasma processing with improved uniformity

In one embodiment, a chamber is provided that includes a chamber body and a lid defining an interior volume, a frame within the interior volume, the frame sized to receive a plurality of substrates in a first orientation, and a rotational drive assembly coupled to the frame for rotating the frame and flipping each of the plurality of substrates to a second orientation that is different than the first orientation.

Exchange and flip chamber design for heterojunction solar cell formation

The present disclosure generally relates to an improved method for forming low resistivity crystalline silicon films for display devices. The processing chamber in which the low resistivity crystalline silicon film is formed is pressurized to a predetermined pressure and a radio frequency power at a predetermined power level is delivered to the processing chamber. In addition, feeding locations of one or more VHF power generator and controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. Diffuser plate having two curved surfaces helps improve crystallinity uniformity.

Methods and apparatus for uniformly and high-rate depositing low resistivity microcrystalline silicon films for display devices

Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from the selected area during the cleaning process. The selected area is chosen based on being the expected location of the last cleaning reaction during the cleaning process within the processing chamber (e.g., a corner in a rectangular chamber). Numerous other aspects are provided.

Methods and apparatus for processing chamber cleaning end point detection

A substrate support assembly and method for controlling the temperature of a substrate within a process chamber with a temperature uniformity of +/&#x2212;5&#xb0; C. are provided. A substrate support assembly includes a thermally conductive body comprising an aluminum material, a substrate support surface on the surface of the thermally conductive body and adapted to support the large area glass substrate thereon, one or more heating elements embedded within the thermally conductive body, and one or more cooling channels embedded within the thermally conductive body and positioned around the one or more heating elements. A process chamber comprising the substrate support assembly of the invention is also provided.

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Santa Clara, CA, United States of America

Su Ho Cho