Lucent Technologies Inc.

Agere Systems Inc.

Svg Lithography Systems, Inc.

Other

Elith LLC

Stuart T Stanton

Donald L White

James Alexander Liddle

George Gustave Zipfel, Jr

David T Neilson

Mark L Oskotsky

Gregg M Gallatin

Victor Katsap

Mark Meyers

Masis Mkrtchyan

Joseph Allen Felker

Frits Zernike

A process and method for projection beam lithography which utilizes an estimator, such as a Kalman filter to control electron beam placement. The Kalman filter receives predictive information from a model and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as wafer heating and beam drift. The process and method may also utilize an adaptive Kalman filter to control electron beam placement. The adaptive Kalman filter receives predictive information from a number of models and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as heating and beam drift. The Kalman filter may be implemented such that real-time process control may be achieved.

Projection electron beam lithography apparatus and method employing an estimator

The optical demuxplixer/multiplexer architecture includes an anamorphic optical system that decouples first characteristics of a beam passing through the anamorphic optical system from at least second characteristics of the beam.

Optical demultiplexer/multiplexer architecture

An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.

Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems

An alignment sensor having a fixed reference grating and a movable wafer grating receiving electromagnetic radiation from a coherent illumination source. The illumination source is split into two beams by a beamsplitter. One beam is directed to a fixed reference grating and the diffracted orders are collected. The other beam from the beamsplitter is directed to a movable wafer grating. The diffracted orders from the movable wafer grating are collected and caused to interfere with the diffracted orders from the fixed reference grating, causing a phase shift indicative of the wafer movement or misalignment with respect to the fixed reference grating. Multiple channels having discrete wavelengths or colors are used to optimize detection and alignment irrespective of wafer processing variables. A polarization fixture on the illumination source and a central polarizing portion on the beamsplitter is used to provide contrast optimization, or alternately a latent image metrology mode. The alignment sensor improves alignment accuracy irrespective of processing variables and provides flexibility improving efficiency in the manufacture of semiconductor devices.

Multi-channel grating interference alignment sensor

A lithographic process for device fabrication in which a pattern is transferred from a mask into an energy sensitive material by projecting charged particle (e.g. electron beam) radiation onto the mask is disclosed. The pattern on the mask is divided into segments. The radiation transmitted through the mask and incident on the layer of energy sensitive material transfers a continuous image of the segmented mask pattern into the energy sensitive material. The images of each segment are joined together to form the continuous image by seam blending techniques. The seam blending techniques employ duplicate pattern information on segments for which the images are joined together. The image of the duplicate pattern information from a first segment is overlapped with the image of the duplicate pattern information from the second segment to blend the seams together. The exposure of the duplicate pattern information is controlled so that the aggregate dose of radiation used to transfer the image of the duplicate pattern information into the energy sensitive resist is about the same as the does of radiation used to transfer the image of the non-duplicate pattern information into the energy sensitive resist material.

Lithographic process for device fabrication using electron beam imaging

An optical lithographic process and system for fabricating devices which includes an optical subsystem for reducing the rate of damage to the system's optics caused by exposure to energy pulses from an exposure source. The optical subsystem transforms a primary energy pulse from the exposure source into N secondary pulses, where N is .gtoreq.2 with a delay provided between each secondary pulse so as to reduce the peak intensity of the energy pulse being transmitted through the optical system. The subsystem redirects the secondary pulses spatially to satisfy source requirements for appropriate lithographic illuminators. Furthermore, the subsystem may be an intrinsic design feature of the illuminator or exposure source.

Reduction in damage to optical elements used in optical lithography for

An illumination system for use in photolithography using a laser or radiation beam source. A deformable mirror is used to shape the beam of laser radiation to obtain global uniformity. A profile sensing means is used to detect any global non-uniformities. The output of this sensing means is fed to a controller for calculating a mirror contour and controlling actuators that shape the deformable mirror to obtain a globally uniform intensity. A diffractive or diffusive optical element, such as a microlens array, eliminates local non-uniformities. Movement of this element eliminates speckle caused by interference due to the coherent beam source. A uniform intensity profile and appropriate angular spread is achieved with very little transmission loss and is automatically compensated for degraded or changing source performance. The illumination system is particularly applicable to a scanning photolithography process as used in the manufacture of semiconductor substrates.

Illumination system and method employing a deformable mirror and

Remote positioning to submicron accuracy is based on comparison of two interference gratings, the first of constant phase, and the second segmented. Positioning corresponds with equal segment-by-segment overlap of an image of one grating superimposed on the other.

High resolution remote position detection using segmented gratings

An illumination system for use in photolithography having an array optical element near the formation of a desired illumination field. Light or electromagnetic radiation from an illumination source is expanded and received by a multi-image optical element forming a plurality of secondary illumination sources in a plane. A condenser receives the light from the plurality of illumination sources. A array or diffractive optical element is placed on or near the focal point of the condenser. The illumination plane formed at the focal point of the condenser is within the near field diffraction pattern of the array or diffractive optical element. There is no condenser following the array or diffractive optical element. The use of the array or diffractive optical element permits the use of a condenser between the multi-image optical element and the array or diffractive optical element having a smaller numerical aperture than the emergent numerical aperture of the diffractive optical element, and generates a desired angular distribution with little dependance on the illumination source profile.

Hybrid illumination system for use in photolithography

Through-the-lens alignment during deep UV lithographic processing in the manufacture of VLSI is accomplished without shifting the mask or wafer from the exposure position. Introduction and extraction of alignment light of actinic wavelength depends on beam routing due to diffraction from an interference grating. The path of alignment light is within the focusing system but does not impinge on the focused pattern.

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Bridgewater, NJ, United States of America

Stuart T Stanton