International Business Machines Corporation

Stuart E Greer

William E Dougherty, Jr

Adolf E Wirsing

Eric Ernest Millham

William J Nestork

Robert T Howard, Jr

Robert W Sargent

William T Norris

A method and apparatus for depositing the material onto a substrate is provided. The apparatus includes a mesh member which has impregnated therein the material which is to be vapor deposited. The mesh member with the material thereon is heated to vaporize the material and the vaporized material is then deposited onto the desired substrate. Preferably the material that is deposited is maintained in a crucible having an opening and the mesh member is disposed over the opening. The material in the crucible is vaporized and condensed onto the mesh member, and the condensed material wicks through the mesh member and then revaporizes from the top of the mesh member and is deposited onto the substrates.

Method and apparatus for vapor deposition of material onto a substrate

A process is described for selective removal of unwanted metallization from the surface of a semiconductor device. The process comprises the usual deposition of a configurable image defining layer on the surface of the device upon which a suitable pad limiting metallurgy (PLM) has already been deposited. The layer is then opened over the pad limiting metallurgy using standard techniques and coated with a layer of the terminal metal. The coated device is then heated to just above the melting point of the terminal metal causing the melted metal, through surface tension to form a ball of metal on the PLM and to form small globules of metal on the surface of the layer and then permitted to cool. When cooled the layer is removed using the usual techniques. Because the coating of terminal metal is no longer a continuous layer on the surface of the mask, removal of the polymer mask can be accomplished in about one-tenth of the time required when compared to a deposited terminal metal layer that is not melted. Also because of the effects of surface tension the metal coating need only be one-half the thickness required under the prior art techniques.

Lift-off process for terminal metals

A substrate for packaging semiconductor chips is provided which is structured with conductors having opposite ends terminating in a mounting surface and intermediate portions extending beneath the surface. The ends of the conductors are arranged in repeating patterns longitudinally along the substrate separated by orthogonal strips free of conductor ends to allow for dense surface wiring. The repeating patterns are arranged to allow for chip mounting sites having sufficient spacing to allow for surface wiring. In this way chips in the same and repeat pattern can be connected by personalized surface wiring and preset substrate conductors.

Personalizable masterslice substrate for semiconductor chips

A method of making an aperture of a predetermined shape into a dielectric substrate which will lockingly receive a deformable contact pin. It includes providing a dielectric material which shrinks in response to a heat treatment by an amount which is different in one direction from that in another direction, and which irreversibly changes dimensions in its two orthogonal directions in proportion to this difference. An aperture is formed in such a material, in a direction normal to the plane of the two orthogonal directions and the material is subjected to a heat treatment that causes a differential shrinkage in the aperture and a change in the shape of the aperture. A deformable contact pin is then forced into a locking position in the aperture. By using such a method to lock a contact pin in close proximity to a conductive line extending across the substrate or by having the aperture and the pin extend through the substrate, electrical circuits on one side of the substrate can be contacted through a contact pin on the opposite side of the substrate.

Method for providing improved electrical and mechanical connection

The coating of a conductor pattern on dielectric green sheets to a common edge thereof with stacking or superimpositioning together of a plurality of sheets to enclose the conductor pattern followed by sintering, with the edge side of the fired body having the exposed end terminations becoming the actual face of the body on which a semiconductor device is mounted in electrical circuit connection to respective ones of the common end terminations of the conductor runs. The conductor runs are returned through the body to the active face of the body to position the opposite or distal ends of the conductors thereat, in an increased spaced relationship of the distal conductor terminations. For external connection, terminal pins may be embedded in the fired body for connection at adjacent and to the distal conductor termination, with the pins projecting therefrom.

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Shelburne, VT, United States of America

Stuart E Greer