Advanced Micro Devices Corporation

Stuart E Brown

Paul W Ackmann

Khanh B Nguyen

John Lee Nistler

Richard David Edwards

Harry Jay Levinson

Anthony John Toprac

A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second portion is etched to define a phase shifting region. The width of the phase shifting region defines a critical dimension. The critical dimension is measured, and the phase shifting region is etched based on the critical dimension to undercut the optically opaque layer. A photomask includes a transparent substrate and a phase shifting region defined in the transparent substrate. The phase shifting region includes sloped sidewalls having a slope of less than about 85&deg;.

Phase-shift photomask for patterning high density features

A photomask includes a transparent substrate, a line patterning feature having ends formed on the transparent substrate, and an island patterning feature adjacent at least one of the ends of the line patterning feature. A method for fabricating a feature on a wafer includes providing a photomask. The photomask includes a transparent substrate, a line patterning feature having ends formed on the transparent substrate, and an island patterning feature adjacent at least one of the ends of the line patterning feature. A radiation source adapted to supply incident radiation is provided, and a wafer is exposed with the incident radiation through the photomask.

Semiconductor feature having support islands

The present invention provides for a method and an apparatus for implementing programmed latency for improved wafer-to-wafer uniformity. Semiconductor devices for wafer-by-wafer analysis are identified. At least one value of a controlled variable in the wafer-by-wafer analysis is identified. A trajectory of recipes for the identified semiconductor devices is created. A sequence analysis of wafer-to-wafer variations is performed using the trajectory of recipes upon the identified semiconductor devices. A latency control is performed in response to the sequence analysis. A feed-forward implementation of wafer-by-wafer latency control is performed using the trajectory of recipes upon the identified semiconductor devices.

Method and apparatus for programmed latency for improving wafer-to-wafer uniformity

A method for processing a semiconductor substrate is presented wherein an alignment mark is formed in an alignment mark area of the semiconductor substrate. The alignment mark area is contained within a window area of the semiconductor substrate. The upper surface of the semiconductor substrate within the window area is recessed below the upper surface of the semiconductor substrate outside of the window area, preferably by exposing the upper surface of the semiconductor substrate within the window area to an etchant. Such recession forms an alignment mark trench within the window area. Being substantially recessed below the original surface of the semiconductor substrate, an alignment mark formed in such a manner may be substantially protected from chemical-mechanical polishing damage during subsequent processing steps.

Method for reducing the susceptibility to chemical-mechanical polishing damage of an alignment mark formed in a semiconductor substrate

An alignment mark protection structure (,) is disclosed which is used to ensure an integrity of an alignment scheme for a substrate (,) which is to be subjected to lithographic processing. The alignment mark protection structure (,) comprises the substrate (,) and an alignment mark (,) associated with the substrate (,). The alignment mark (,) reflects an alignment light (,) which is then used to determine an optimum alignment between the substrate (,) and a lithographic mask (,). A cap (,) overlies the alignment mark (,) and is substantially transparent with respect to the alignment light (,). The cap (,) protects the underlying alignment mark (,) from lithographic process-induced damage during processing and thus reduces alignment light noise, thereby improving the alignment between a mask (,) and the substrate (,) and minimizing the registration error associated with overlying layers formed on the substrate (,).

Mark protection with transparent film

A method (,) of characterizing a lithographic printer includes the steps of printing a first and second pattern (,) on substrates (,) using a reticle (,) having a first and second orientation. The method (,) further includes measuring a critical dimension of the first and second pattens at two points (,) and determining an imaging system component of the critical dimension of the patterns at the two points (,). The method (,) may be further expanded to encompass substantially all the points within the image field.

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Austin, TX, United States of America

Stuart E Brown