Adeia Semiconductor Solutions LLC

Tessera LLC

Stuart A Sieg

Bruce Bennett Doris

Sivananda K Kanakasabapathy

Fee Li Lie

Soon-Cheon Seo

Hong He

Chi-Chun Liu

Nelson M Felix

Gauri V Karve

Yann A M Mignot

Derrick Liu

Sean D Burns

A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

Alternating hardmasks for tight-pitch line formation

A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.

Structure and process to tuck fin tips self-aligned to gates

Growing community of inventors

Albany, NY, United States of America

Stuart A Sieg