Mapper Lithography IP B.v.

Asml Netherlands B.v.

Other

Stijn Willem Herman Karel Steenbrink

Pieter Kruit

Marco Jan-Jaco Wieland

Alexander Hendrik Vincent Van Veen

Remco Jager

Guido De Boer

Niels Vergeer

Robert Mossel

Kaustubh Prabodh Padhye

Yanxia Zhang

Johnny Joannes Jacobus Van Baar

Martijn J Van Bruggen

Johan Joost Koning

Teunis Van De Peut

Erwin Slot

Willem Henk Urbanus

Bert Jan Kampherbeek

Henk Derks

Laura Dinu-Gürtler

Marco Jan Jaco Wieland

Tijs Frans Teepen

Peter Veltman

Alrik Van Den Brom

Ralph Van Melle

Bart Schipper

Pieter Kappelhof

Norman Hendrikus Rudolf Baars

Alexander Hendrik Van Veen

Gerardus Fernandus Ten Berge

Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which

Lithography system, sensor and measuring method

An electrostatic lens comprising a first conductive plate with a first aperture, a second conductive plate with a second aperture, the second aperture being substantially aligned with the first aperture, a voltage supply for supplying a first voltage to the first conductive plate and a second voltage to the second conductive plate, the first voltage being lower than the second voltage, and an insulating structure for separating the first conductive plate from the second conductive plate. The insulating structure comprises a first portion in contact with the first conductive plate and a second portion in contact with the second conductive plate, the first portion having an overhanging portion and the second portion having an indented portion at an edge of the insulating structure, so that a gap is formed between the overhanging portion and the second conductive plate.

Electrostatic lens structure

The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.

Electro-optical element for multiple beam alignment

The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched 'on' or 'off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

Lithography system and projection method

The invention relates to a charged-particle multi-beamlet lithography system. The system comprises a beam generator for generating a plurality of beamlets, a beamlet blanker array for patterning the plurality of beamlets, an optical fiber arrangement, and a projection system. The beamlet blanker array comprises a substrate provided with a first area comprising one or more modulators and a second area free of modulators. The beamlet blanker array comprises one or more light sensitive elements, electrically connected to the one or more modulators, and arranged to receive light beams carrying pattern data. The optical fiber arrangement comprises a plurality of optical fibers for guiding the light beams carrying pattern data towards the one or more light sensitive elements. The projection of the optical fiber arrangement onto a surface of the beamlet blanker array in a direction perpendicular to the surface falls entirely within the second area.

Modulation device and charged particle multi-beamlet lithography system using the same

A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam.

Charged particle lithography system with intermediate chamber

A projection lens arrangement for a charged particle multi-beamlet system, the projection lens arrangement including one or more plates and one or more arrays of projection lenses. Each plate has an array of apertures formed in it, with projection lenses formed at the locations of the apertures. The arrays of projection lenses form an array of projection lens systems, each projection lens system comprising one or more of the projection lenses formed at corresponding points of the one or more arrays of projection lenses.

Projection lens arrangement

A maskless lithography system for transferring a pattern onto a surface of a target. At least one beamlet optical unit generates a plurality of beamlets. At least one measuring unit measures properties of each beamlet. At least one control unit generates and delivers pattern data to the beamlet optical unit. The control unit is operationally coupled to the measuring unit for identifying invalid beamlets which have a measured property value outside a predefined range of values for the property. At least one actuator induces a shift of the beamlet optical unit and the target with respect to one another. The actuator is operationally coupled with the control unit. The control unit determines the shift, positioning valid beamlets at the position of the invalid beamlets, thus replacing the invalid beamlets with valid beamlets.

Reliability in a maskless lithography system

The invention relates to a lithography system. The lithography system has a projection lens system and a capacitive sensing system. The projection lens system is provided with a final projection lens. The capacitive sensing system is arranged for making a measurement related to a distance between the final projection lens and a target. The capacitive sensing system includes at least one capacitive sensor. Additional, the capacitive sensing system is provided with a flexible printed circuit structure and at least one integrated flex print connector. The at least one sensor is located in the flexible printed circuit structure. The flexible printed circuit structure has a flexible base provided with conductive electrodes for the at least one sensor and conductive tracks. The conductive tracks extend from the electrodes along the at least one integrated flex print connector.

Capacitive sensing system

The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system includes a beam generator, a beamlet blanker array, a shielding structure and a projection system. The beam generator is arranged for generating a plurality of charged particle beamlets. The beamlet blanker array is arranged for patterning the beamlets. The beamlet blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and are electrically connected to one or more modulators. The shielding structure is of an electrically conductive material for substantially shielding electric fields generated in proximity of the light sensitive elements from the modulators. The shielding structure is arranged to be set at a predetermined potential. The projection system is arranged for projecting the patterned beamlets onto the target surface.

The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.

Charged particle multi-beamlet lithography system with modulation device

The present invention relates to a projection lens assembly module for directing a multitude of charged particle beamlets onto an image plane located in a downstream direction, and a method for assembling such a projection lens assembly. In particular the present invention discloses a modular projection lens assembly with enhanced structural integrity and/or increased placement precision of its most downstream electrode.

Enhanced integrity projection lens assembly

The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Multiple beam charged particle optical system

A capacitive sensing system having two or more capacitive sensors, one or more AC power sources for energizing the capacitive sensors, and a signal processing circuit for processing signals from the sensors. The sensors are arranged in pairs, wherein the one or more AC power sources are arranged to energize a first sensor of a pair of the sensors with an alternating current or voltage 180 degrees out of phase to a current or voltage for a second sensor of the pair of sensors, and wherein a pair of the sensors provides a measuring unit for a single measured distance value, the signal processing circuit receiving an output signal from each sensor of the pair and generating a measured value related to the average distance between the sensors of the pair and the target.

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The Hague, Netherlands

Stijn Willem Herman Karel Steenbrink