Novellus Systems Incorporated

Lam Research Corporation

University of California

Polystor Corporation

The United States of America As Represented by the United States

Other

Steven T Mayer

David W Porter

Jonathan David Reid

Bryan L Buckalew

Robert Rash

Thomas Anand Ponnuswamy

Lee Peng Chua

Evan E Patton

Eric G Webb

James L Kaschmitter

Seshasayee Varadarajan

Richard W Pekala

John Stephen Drewery

Avishai Kepten

Zhian He

Jingbin Feng

R Marshall Stowell

Robert J Contolini

Aaron Berke

Richard G Abraham

Mark J Willey

Haiying Fu

Richard S Hill

Edmund Minshall

Matthew S Thorum

Brian Paul Blackman

Santosh Kumar

Shantinath Ghongadi

Eliot K Broadbent

Kousik Ganesan

Daniel Mark Dinneen

David Charles Smith

Robert L Jackson

John B Alexy

Mark L Rea

Joseph Richardson

John H Sukamto

Timothy Mark Archer

Kari Thorkelsson

Dinesh S Kalakkad

Daniel A Koos

Theodore Cacouris

Thomas W Mountsier

Gary B Lind

James Isaac Fortner

Lee J Brogan

Steve Taatjes

Chad Michael Hosack

Timothy Patrick Cleary

Burhanuddin Kagajwala

Hilton Diaz Camilo

John H Feikert

Doug Higley

Lawrence Ossowski

Jon Henri

Stephen J Banik

Tighe A Spurlin

Gabriel Hay Graham

John Floyd Ostrowski

Tariq Majid

Jeyavel Velmurugan

Mark E Emerson

Gregory Kearns

Fung-Ming Kong

Aaron LaBrie

Robert L Morrison

Justin Oberst

Bryan Pennington

Heung L Park

Jacob Kurtis Blickensderfer

Christopher M Bartlett

Andrew J McCutcheon

Richard K Lyons

Roey Shaviv

Ronald Allan Powell

Frederick Dean Wilmot

Richard N Hill

Anthony F Bernhardt

Henner Meinhold

Jeffrey Alan Hawkins

Sesha Varadarajan

Ismail Emesh

Julia S Svirchevski

Michael John Janicki

John C Whitehead

Robert Marshall Stowell

Edward C Opocensky

Tri D Tran

Jian Zhou

James E Duncan

Jeff Hawkins

Yuichi Takada

Marshall Stowell

Seyang Park

Ludan Huang

Charles Lorenzo Merrill

Rajan Arora

Jon Reid

Lisa A Tarte

Huanfeng Zhu

Systems and methods for electroplating are provided. An electroplating system may include an electroplating cell configured to contain an anode and an electroplating solution, a wafer holder configured to support a wafer within the electroplating cell, a reservoir configured to contain at least a portion of the electroplating solution, a recirculation flowpath that fluidically connects the reservoir and the electroplating cell, in which the recirculation flowpath includes a pump and is configured to circulate the electroplating solution between the reservoir and the electroplating cell, and a frother fluidically connected to one or more of the electroplating cell, the reservoir, and the recirculation flowpath. The frother may be configured to generate bubbles in the electroplating solution when the electroplating solution is present in the electroplating system, interfaced with the frother, and the frother is activated.

Byproduct removal from electroplating solutions

A method of electroplating metal into features of a partially fabricated electronic device on a substrate having high open area portions is provided. The method includes initiating a bulk electrofill phase with a pulse at a high level of current; reducing the current to a baseline current level; and optionally increasing the current in one or more steps until electroplating is complete.

TSV process window and fill performance enhancement by long pulsing and ramping

Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.

Gold through silicon mask plating

Undesired deposition of metals on a lipseal (lipseal plate-out) during electrodeposition of metals on semiconductor substrates is minimized or eliminated by minimizing or eliminating ionic current directed at a lipseal. For example, electrodeposition can be conducted such as to avoid contact of a lipseal with a cathodically biased conductive material on the semiconductor substrate during the course of electroplating. This can be accomplished by shielding a small selected zone proximate the lipseal to suppress electrodeposition of metal proximate the lipseal, and to avoid contact of metal with a lipseal. In some embodiments shielding is accomplished by sequentially using lipseals of different inner diameters during electroplating of metals into through-resist features, where a lipseal having a smaller diameter is used during a first electroplating step and serves as a shield blocking electrodeposition in a selected zone. In a second electroplating step, a lipseal of a larger inner diameter is used.

Wafer shielding for prevention of lipseal plate-out

In one implementation a cathode for electrochemical metal removal has a generally disc-shaped body and a plurality of channels in the generally disc-shaped body, where the channels are configured for passing electrolyte through the body of the cathode. The channels may be fitted with non-conductive (e.g., plastic) tubes that in some embodiments extend above the body of the cathode to a height of at least 1 cm. The cathode may also include a plurality of indentations at the edge to facilitate electrolyte flow at the edge of the cathode. In some embodiments the cathode includes a plurality of non-conductive fixation elements on a conductive surface of the cathode, where the fixation elements are attachable to one or more handles for removing the cathode from the electrochemical metal removal apparatus.

Electro-oxidative metal removal in through mask interconnect fabrication

An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position. In another aspect, an electroplating apparatus for electroplating metal includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, a shield configured to shield current at the periphery of the substrate; and an azimuthally asymmetric auxiliary anode configured to donate current to the shielded periphery of the substrate at a selected azimuthal position on the substrate.

Electroplating apparatus for tailored uniformity profile

Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

Cleaning electroplating substrate holders using reverse current deplating

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

Dynamic modulation of cross flow manifold during elecroplating

Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

Methods and apparatus for flow isolation and focusing during electroplating

A device for measuring electrical properties of electrical contacts within an electroplating apparatus has a disc-shaped structure like that of a wafer. Multiple conductive pads are formed to collectively circumscribe an outer periphery of the disc-shaped structure. Adjacently positioned ones of the conductive pads are electrically isolated from each other. The device includes a current source that supplies electric current at a first terminal and sinks electric current at a second terminal. The device includes measurement circuitry, having first and second input terminals, that determines a value of an electrical parameter based on signals present at the first and second input terminals. The device includes switching circuitry for connecting selected ones of the conductive pads to the first and second terminals of the current source and to the first and second input terminals of the measurement circuitry at a given time. The device also includes an onboard power supply.

Apparatus for measuring condition of electroplating cell components and associated methods

Disclosed are electroplating cups for holding, sealing, and providing electrical power to wafers during electroplating, where the electroplating cup can include a cup bottom, an elastomeric lipseal, and an electrical contact element. The cup bottom can include a radially inwardly protruding surface with a plurality of through-holes. The elastomeric lipseal can directly adhere to the radially inwardly protruding surface of the cup bottom, fill the plurality of through-holes, and encircle an inner edge of the cup bottom. In some implementations, this can mitigate the effects of wafer sticking. In some implementations, the cup bottom may be treated to promote adhesion between the elastomeric lipseal and the radially inwardly protruding surface of the cup bottom.

Integrated elastomeric lipseal and cup bottom for reducing wafer sticking

An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn&#x2014;Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

Protecting anodes from passivation in alloy plating systems

An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity

Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.

Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

Wetting pretreatment for enhanced damascene metal filling

Growing community of inventors

Lake Oswego, OR, United States of America

Steven T Mayer