Kla Tencor Corporation

Kla-tencor Technologies Corporation

Other

Kla Corporation

Kla-tenor Corp.

Steven R Lange

David W Shortt

Eliezer Rosengaus

Robert M Danen

Ilya Bezel

Anatoly Shchemelinin

Gregory Kirk

Matthew Derstine

Kenneth P Gross

Oleg Khodykin

Richard William Solarz

Hong Fu

Wei Zhao

Prashant Aji

Yu Guan

Charles Amsden

Stefano Palomba

Junwei Wei

Daniel Kapp

Stephane Durant

Bosheng Zhang

X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

System and method for x-ray imaging and classification of volume defects

Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

Inspection systems and techniques with enhanced detection

Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Defect marking for semiconductor wafer inspection

Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

Apparatus and methods for determining defect depths in vertical stack memory

Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface, as well as to detect defects only on the surface.

Apparatus and methods for detecting defects in vertical memory

The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

System and method for imaging a sample with a laser sustained plasma illumination output

Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface.

Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Multi-spectral defect inspection for 3D wafers

A method for wafer defect inspection may include, but is not limited to: providing an inspection target; applying at least one defect inspection enhancement to the inspection target; illuminating the inspection target including the at least one inspection enhancement to generate one or more inspection signals associated with one or more features of the inspection target; detecting the inspection signals; and generating one or more inspection parameters from the inspection signals. An inspection target may include, but is not limited to: at least one inspection layer; and at least one inspection enhancement layer.

Optical defect amplification for improved sensitivity on patterned layers

All-reflective optical systems for broadband wafer inspection are provided. One system configured to inspect a wafer includes an optical subsystem. All light-directing components of the optical subsystem are reflective optical components except for one or more refractive optical components, which are located only in substantially collimated space. The refractive optical component(s) may include, for example, a refractive beamsplitter element that can be used to separate illumination and collection pupils. The optical subsystem may also include one or more reflective optical components located in substantially collimated space. The optical subsystem is configured for inspection of the wafer across a waveband of greater than 20 nm. In some embodiments, the optical subsystem is configured for inspection of the wafer at wavelengths less than and greater than 200 nm.

All-reflective optical systems for broadband wafer inspection

A surface inspection apparatus and method are disclosed. In particular, the method and apparatus are capable of inspecting a surface in two (or more) optical regimes thereby enhancing the defect detection properties of such method and apparatus. A method involves illuminating the surface with light in a first wavelength range and a second wavelength range. The first wavelength range selected so that the surface is opaque to the light of the first wavelength range so that a resultant optical signal is produced that is predominated by diffractive and scattering properties of the surface. The second wavelength range is selected so that the surface is at least partially transmissive to light in the second wavelength range so that another resultant optical signal is produced that is predominated by thin film optical properties of the surface. The resultant optical signals are detected and processed to detect defects in the surface. Devices for implementing such methods are also disclosed.

Method and apparatus for inspecting a substrate using a plurality of inspection wavelength regimes

Various inspection and review systems for wafers or reticles are provided. One system includes an optical component configured to project light onto a specimen during inspection or review. The system also includes a liquid disposed between and in contact with surfaces of the optical component and the specimen. The liquid does not permanently alter properties of the optical component or the specimen. Preferably, the presence of the liquid between the optical component and the specimen increases the resolution of the inspection or review system. Another system includes an inspection or review subsystem configured to project light through an optical component, a liquid, and onto a specimen. The liquid contacts the optical component and the specimen. This system also includes a processing subsystem configured to remove the liquid from the specimen after inspection or review. In some embodiments, the processing subsystem is configured to clean the specimen after inspection or review.

Systems for inspecting wafers and reticles with increased resolution

A method for limiting exposure of a substrate to potentially damaging radiation from a radiating apparatus. A database of information associated with the substrate is compiled, and the substrate is identified prior to processing the substrate on the radiating apparatus. The database of information associated with the substrate is accessed, including its past irradiation history of dosage and type of irradiation, based on the substrate identification, and the operation of the radiating apparatus is selectively modified based at least in part on the information associated with the substrate.

Radiation damage reduction

An illuminator for uniformly illuminating an entrance pupil of an inspection system in order to increase inspection resolution and sensitivity and improve system-to-system matching is described. The illuminator incorporates at least two lightpipes for spatially and angularly distributing light rays from the illuminator uniformly across the entrance pupil. The illuminator also results in spatial and angular uniformity at the field stop plane. In one embodiment, one lightpipe has a circular shape and a second lightpipe has a rectangular shape.

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Alamo, CA, United States of America

Steven R Lange